Electrical characterization of FSG low K dielectric deposition in HDP and PECVD tools

1997 ◽  
Author(s):  
Gennadi Bersuker ◽  
Michael J. Shapiro ◽  
James Werking ◽  
Sang U. Kim
Keyword(s):  
Electrical Characterization ◽  
Low K

Electrical Characterization of Sub-30nm Gatelength SOI MOSFETs

2004 ◽  
Author(s):  
Terence Kane ◽  
Michael P. Tenney
Keyword(s):  
Electrical Characterization ◽  
Dielectric Films ◽  
Atomic Force ◽  
Soi Devices ◽  
Low K

Abstract Atomic Force Probe (AFP) techniques are well suited for the electrical characterization of sub-65nm node SOI devices with multiple metal interconnect levels and low-k interlevel dielectric films. This paper discusses the use of these techniques on sub-30nm gatelength SOI MOSFETs.

Electrochemical, Physical, and Electrical Characterization of Two Clean Solutions for Cu PCMP Clean

2012 ◽  
Vol 187 ◽  
pp. 235-239
Author(s):  
Yun Long Li ◽  
Nancy Heylen ◽  
Jerome Daviot ◽  
Chris Reid ◽  
Leonardus Leunissen
Keyword(s):  
Electrical Characterization ◽  
Integration Scheme ◽  
Electrical Characterizations ◽  
Low K

Cu post-CMP clean is important to keep both Cu and low-k dielectric clean after polishing. In this paper, two Cu post-CMP clean solutions are analyzed in electrochemical, physical and electrical characterizations, based on the material and integration scheme of imec 65nm platform. It is shown that the combination of these two PCMP clean solutions can achieve both reasonable cleaning efficiencies and reliable low-k dielectric lifetime.

Mechanical and Electrical Characterization of an IC Bond Pad Stack Using a Novel In-Situ Methodology

2003 ◽  
Author(s):  
C.D. Hartfield ◽  
J.J. Broz ◽  
T.M. Moore
Keyword(s):  
Integrated Circuit ◽  
Electrical Characterization ◽  
Dynamic Contact ◽  
Wafer Level ◽  
New Class ◽  
Increased Risk ◽  
Bond Pads ◽  
Low K

Abstract The semiconductor industry’s efforts to integrate dielectrics into Si devices has driven characterization efforts to address the challenges presented by adoption of this new class of materials. Abundant literature exists on the considerations required for CMP process recommendations for successful fabrication, adhesion requirements for both fabrication and assembly, and considerations for interconnect structure to enable wire-bonding. There is also interest in understanding the wafer level test challenges presented by the low-K devices. In addition to the typical concerns about reaching the best compromise of good contact resistance (CRES) performance with a minimum amount of probe damage, low-K materials present an increased risk of compromising the dielectric or barrier layers beneath bond pads. For a better understanding of the dynamic contact phenomenon of probing and its effect on the integrated circuit (IC) metal stack, a specialized in-situ nanomanipulator tool was developed for simultaneous visualization of probing events with data recording of electrical and load measurements. This paper describes initial research with this new tool.

Electrical Characterization of BCB for Electrostatic Microelectromechanical Devices

2003 ◽  
Vol 782 ◽  
Author(s):  
Alireza Modafe ◽  
Nima Ghalichechian ◽  
Benjamin Kleber ◽  
Reza Ghodssi
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Energy Loss ◽  
Leakage Current ◽  
Moisture Absorption ◽  
Breakdown Strength ◽  
Electrical Characterization ◽  
Electrical Energy ◽  
Low K

ABSTRACTElectrical properties and thickness of insulating dielectric films directly affect electrical energy loss and electrical breakdown limit in electric micromachines. A thick, low-k film exhibits low parasitic capacitive effects that help with the reduction of electrical energy loss. The electrical performance can be deteriorated due to degradation of the electrical properties of the insulating dielectric material caused by process, device structure, and moisture. In this paper, we introduce the application of CYCLOTENE, a spin-on, low-k, BCB-based polymer in electric micromachines as insulating layer and interlevel dielectric. A novel approach using interdigitated capacitors for electrical characterization of CYCLOTENE and the effect of moisture absorption is introduced in this paper. The dielectric constant of CYCLOTENE is extracted from two steps of capacitance measurements, giving an average value of 2.49 with a standard deviation of 1.5 %. The dielectric constant increases by 1.2 % after a humidity stress of 85 %RH at 85 °C. The measured I-V characteristics of CYCLOTENE show a dependency of the breakdown strength and leakage current on the geometrical dimensions of the device under test. A breakdown strength of 225 V/μm for 2 μm finger spacing and 320 V/μm for 3 μm finger spacing, and a leakage current of a few to tens of pA are measured. The I-V characteristics degrades drastically after a humidity stress of 85 %RH at 85 °C, showing a breakdown strength of 100 V/μm for 2 μm finger spacing and 180 V/μm for 3 μm finger spacing. Based on the results of this study, it is expected that the electrical efficiency of an electric micromachine is improved using BCB-based polymers with negligible dependency on moisture absorption. On the other hand, the maximum performance that depends on the maximum operating voltage is adversely affected by the degradation of the breakdown voltage after moisture absorption.

Electrical characterization of low-k films with nano-pore structure prepared with DMDMOS/O2 precursors

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5688-5692 ◽  
Author(s):  
Chang Young Kim ◽  
R. Navamathavan ◽  
Heon Ju Lee ◽  
Chi Kyu Choi
Keyword(s):  
Pore Structure ◽  
Electrical Characterization ◽  
Low K

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

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