Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films

Author(s):  
R.A. Donaton ◽  
F. Iacopi ◽  
R. Baklanov ◽  
D. Shamiryan ◽  
B. Coenegrachts ◽  
...  
Author(s):  
Terence Kane ◽  
Michael P. Tenney

Abstract Atomic Force Probe (AFP) techniques are well suited for the electrical characterization of sub-65nm node SOI devices with multiple metal interconnect levels and low-k interlevel dielectric films. This paper discusses the use of these techniques on sub-30nm gatelength SOI MOSFETs.


AIP Advances ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 025304 ◽  
Author(s):  
R. Y. Khosa ◽  
E. B. Thorsteinsson ◽  
M. Winters ◽  
N. Rorsman ◽  
R. Karhu ◽  
...  

2012 ◽  
Vol 187 ◽  
pp. 235-239
Author(s):  
Yun Long Li ◽  
Nancy Heylen ◽  
Jerome Daviot ◽  
Chris Reid ◽  
Leonardus Leunissen

Cu post-CMP clean is important to keep both Cu and low-k dielectric clean after polishing. In this paper, two Cu post-CMP clean solutions are analyzed in electrochemical, physical and electrical characterizations, based on the material and integration scheme of imec 65nm platform. It is shown that the combination of these two PCMP clean solutions can achieve both reasonable cleaning efficiencies and reliable low-k dielectric lifetime.


1997 ◽  
Author(s):  
Gennadi Bersuker ◽  
Michael J. Shapiro ◽  
James Werking ◽  
Sang U. Kim

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