ArF excimer-laser exposure durability of chromium-fluoride-attenuated phase-shift masks

1997 ◽  
Author(s):  
Yuko Seki ◽  
Jun Ushioda ◽  
Takashi Saito ◽  
Katsumi Maeda ◽  
Kaichiro Nakano ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Exposure ◽  
Arf Excimer Laser

Production of Electronically Excited P2 and in from ArF Excimer Laser Irradiation of InP

1986 ◽  
Vol 75 ◽  
Author(s):  
V. M. Donnelly ◽  
V. R. McCrary ◽  
D. Brasen
Keyword(s):  
Excimer Laser ◽  
Laser Frequency ◽  
Laser Exposure ◽  
Resonance Fluorescence ◽  
Thermally Activated ◽  
Ejection Process ◽  
Electronically Excited ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
193 Nm

AbstractWe have investigated the decomposition of single-crystal InP surfaces irradiated by a 193 nm ArF excimer laser. These studies provide insight into mechanisms of thermal decomposition, surface diffusion and epitaxy. Pulsed laser exposure leads to evolution of P2 from the surface which is detected by resonance fluorescence resulting from a fortuitous overlap of the v″ = 0 with the laser frequency. P2-evolution occurs above a threshold fluence of 0.12 J/cm2 and lags the peak laser intensity by ∼20 nsec. These observations are explained by a thermally activated decomposition mechanism, as opposed to any direct, photochemical ejection process. Peak surface temperatures have been calculated and are used to predict P2 yields as a function of fluence and time which are in good agreement with experiments. These findings are also discussed in relation to previous studies of excimer laser stimulated growth of InP.

scholarly journals Molecular Design of Acid Generators for EB and ArF Excimer Laser Exposure Using Molecular Orbital Calculations.

1994 ◽  
Vol 7 (3) ◽  
pp. 423-432 ◽  
Author(s):  
Tohru Ushirogouchi ◽  
Naoko Kihara ◽  
Satoshi Saito ◽  
Takuya Naito ◽  
Koji Asakawa ◽  
...  
Keyword(s):  
Molecular Orbital ◽  
Excimer Laser ◽  
Molecular Design ◽  
Laser Exposure ◽  
Molecular Orbital Calculations ◽  
Arf Excimer Laser

Fabrication of 0.1 µm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7488-7493 ◽  
Author(s):  
Keisuke Nakazawa ◽  
Masaya Uematsu ◽  
Toshio Onodera ◽  
Kazuya Kamon ◽  
Tohru Ogawa ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Lithography ◽  
Arf Excimer Laser ◽  
Phase Shift Mask ◽  
Alternating Phase Shift Mask

Realization of practical attenuated phase-shift mask with high-transmission KrF excimer laser exposure

1999 ◽  
Author(s):  
Nobuhito Toyama ◽  
Hiroyuki Miyashita ◽  
Yasutaka Morikawa ◽  
Hiroshi Fujita ◽  
Kazuya Iwase ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Exposure ◽  
High Transmission ◽  
Krf Excimer Laser ◽  
Phase Shift Mask

Development of ZrSiO attenuated phase-shift mask for ArF excimer laser lithography

1999 ◽  
Author(s):  
Nobuhiko Fukuhara ◽  
Takashi Haraguchi ◽  
Koichiro Kanayama ◽  
Tadashi Matsuo ◽  
Susumu Takeuchi ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Lithography ◽  
Arf Excimer Laser ◽  
Phase Shift Mask

Single-Layer Resist for ArF Excimer Laser Exposure Containing Aromatic Compounds

1995 ◽  
pp. 239-254 ◽  
Author(s):  
Tohru Ushirogouchi ◽  
Takuya Naito ◽  
Koji Asakawa ◽  
Naomi Shida ◽  
Makoto Nakase ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Aromatic Compounds ◽  
Single Layer ◽  
Laser Exposure ◽  
Arf Excimer Laser

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

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