Realization of practical attenuated phase-shift mask with high-transmission KrF excimer laser exposure

1999 ◽  
Author(s):  
Nobuhito Toyama ◽  
Hiroyuki Miyashita ◽  
Yasutaka Morikawa ◽  
Hiroshi Fujita ◽  
Kazuya Iwase ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Exposure ◽  
High Transmission ◽  
Krf Excimer Laser ◽  
Phase Shift Mask

0.10 µm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2686-2693 ◽  
Author(s):  
Shuji Nakao ◽  
Akihiro Nakae ◽  
Atsumi Yamaguchi ◽  
Kouichirou Tsujita ◽  
Wataru Wakamiya
Keyword(s):  
Pattern Formation ◽  
Phase Shift ◽  
Excimer Laser ◽  
Double Exposure ◽  
Krf Excimer Laser ◽  
Phase Shift Mask ◽  
Alternating Phase Shift Mask

Recent Progress in Excimer Laser Lithography

1987 ◽  
Vol 101 ◽  
Author(s):  
I. Higashikawa ◽  
M. Nonaka ◽  
T. Sato ◽  
M. Nakase ◽  
S. Ito ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Diffraction Method ◽  
Pulse Frequency ◽  
Field Size ◽  
Laser Exposure ◽  
Projection Lens ◽  
Laser Lithography ◽  
Alignment System ◽  
Space Pattern ◽  
Krf Excimer Laser

ABSTRACTA KrF excimer laser exposure method has been developed for laboratory use, which employs 10 to 1 achromatic projection lens of 0.37 NA and 5x5 mm field size , and a TTL alignment system using the double diffraction method, which was realized by the use,of the achromatic lens. Novolak type mid-UV resists, such as AZ-5214 and PR-1024, were best suited for use in 248 nm exposure, considering the sensitivity and etching resistance from a practical viewpoint, and an additional post exposure baking process also improved the resist profile. The dependences of the exposure characteristics on the energy density per pulse and pulse frequency of these resists were not observed in the region of the practical exposure conditions. An alignment precision of x±30-= 0.2 μm was achieved for the alignment mark consisting of poly Si pattern. Thus, a 0.3 μm line and space pattern was realized by using tri-level resist process and a 0.2 μm gate pattern was successfully fabricated on the coplanar pattern with a 0.4 μm step.

A Projection-Type Excimer-Laser Crystallization System For Ultra-Large Grain Growth Of Si Thin-Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Chang-Ho Oh ◽  
Mitsuru Nakata ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Phase Shift ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Optical Lens ◽  
System A ◽  
Optical Projection ◽  
Crystallization System ◽  
Excimer Laser Crystallization ◽  
Phase Shift Mask

ABSTRACTWe have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using oneand two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

Excimer Laser Direct Write Aluminum on Aluminum Nitride

1995 ◽  
Vol 390 ◽  
Author(s):  
Hua Li ◽  
Janet K. Lumpp
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Laser Energy ◽  
Laser Exposure ◽  
Direct Write ◽  
Electron Microscopies ◽  
Scan Speed ◽  
Krf Excimer Laser ◽  
Induced Decomposition ◽  
Made In

ABSTRACTFabrication of metal lines on aluminum nitride (AIN) ceramic is important for application of AIN as a microcircuit board. An Al line can be made directly from AIN by excimer laser exposure. All lines in this paper were written by pulsed KrF excimer laser (248 nm) in air and vacuum at different scan speeds with a constant laser energy. The morphology of the Al lines was observed by optical and scanning electron microscopies. The lines become more metallic when the scan speed decreases. Consequently the resistance, measured by the four-point probe technique, decreased to a minimum value in the scan speed range of 400 μm/s to 900 μm/s for the samples made in air. The resistance of Al lines written in air is greater than that in vacuum because of oxidation. The samples made in air with scan speed lower than 400 μm/s were heavily oxidized. SAXPS spectra showed a strong oxidation state and that the excimer laser exposure depletes nitrogen from AMN. The Al lines produced by laser-induced decomposition of AMN board are being evaluated as catalysts for laser assisted CVD and conventional electroless plating. The oxidation layer on the surface of Al lines may effect the adhesion between the Al lines and the deposited or plated metal.

ArF excimer-laser exposure durability of chromium-fluoride-attenuated phase-shift masks

1997 ◽  
Author(s):  
Yuko Seki ◽  
Jun Ushioda ◽  
Takashi Saito ◽  
Katsumi Maeda ◽  
Kaichiro Nakano ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Exposure ◽  
Arf Excimer Laser

Fabrication of 0.1 µm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7488-7493 ◽  
Author(s):  
Keisuke Nakazawa ◽  
Masaya Uematsu ◽  
Toshio Onodera ◽  
Kazuya Kamon ◽  
Tohru Ogawa ◽  
...  
Keyword(s):  
Phase Shift ◽  
Excimer Laser ◽  
Laser Lithography ◽  
Arf Excimer Laser ◽  
Phase Shift Mask ◽  
Alternating Phase Shift Mask

Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask: II. Experimental results

1999 ◽  
Author(s):  
Robert J. Socha ◽  
Xuelong Shi ◽  
Ken C. Holman ◽  
Mircea V. Dusa ◽  
Will Conley ◽  
...  
Keyword(s):  
Phase Shift ◽  
Experimental Results ◽  
High Transmission ◽  
Phase Shift Mask

Imaging behavior of high-transmission attenuating phase-shift mask films

2006 ◽  
Author(s):  
Michael Hibbs ◽  
Satoru Nemoto ◽  
Toru Komizo
Keyword(s):  
Phase Shift ◽  
High Transmission ◽  
Phase Shift Mask

Development of a new high transmission phase shift mask technology for 10 nm logic node

2016 ◽  
Author(s):  
Thomas Faure ◽  
Yoshifumi Sakamoto ◽  
Yusuke Toda ◽  
Karen Badger ◽  
Kazunori Seki ◽  
...  
Keyword(s):  
Phase Shift ◽  
High Transmission ◽  
Phase Shift Mask ◽  
Transmission Phase
Sign in / Sign up

Export Citation Format

Share Document