Excimer laser crystallization of hydrogenated amorphous silicon

1996 ◽  
Author(s):  
Yongbin Dai ◽  
Zhongyang Xu ◽  
Changan Wang ◽  
Shaoquiang Zhang ◽  
Chengwu An ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous

High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Carluccio ◽  
A. Pecora ◽  
G. Fortunato ◽  
J. Stoemenos ◽  
N. Economou
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Solidification Velocity ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTExcimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

1999 ◽  
Vol 85 (11) ◽  
pp. 7914-7918 ◽  
Author(s):  
D. Toet ◽  
P. M. Smith ◽  
T. W. Sigmon ◽  
T. Takehara ◽  
C. C. Tsai ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Structural Characterization ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous
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