High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Carluccio ◽  
A. Pecora ◽  
G. Fortunato ◽  
J. Stoemenos ◽  
N. Economou
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Solidification Velocity ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTExcimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

Excimer laser crystallization of hydrogenated amorphous silicon

1996 ◽  
Author(s):  
Yongbin Dai ◽  
Zhongyang Xu ◽  
Changan Wang ◽  
Shaoquiang Zhang ◽  
Chengwu An ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous

Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
W. Futako ◽  
I. Shimizu ◽  
C. M. Fortmann
Keyword(s):  
Thin Layer ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Atomic Hydrogen ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Narrow Gap ◽  
High Quality ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon (a-Si:H) with a gaps narrower than 1.7 eV were made by repeating the deposition of a thin layer (1–3 nm thick) and the treatment of growing surface with a mixture of H and Ar*. Crystallization induced by permeation of hydrogen into the subsurface at high substrate temperature (>200C) was efficiently prevented by treating with a mixture of H and Ar*. The activation of growing surface may arise from releasing a part of hydrogen on surface by treating with Ar*. High quality a-Si:H films containing hydrogen of 3 atom % with a gap of 1.6 eV were made by chemical annealing with a mixture of H and Ar*.

Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation

1993 ◽  
Vol 73 (11) ◽  
pp. 7435-7440 ◽  
Author(s):  
Ratnabali Banerjee ◽  
Sukriti Ghosh ◽  
S. Chattopadhyay ◽  
A. K. Bandyopadhyay ◽  
P. Chaudhuri ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Silicon Films ◽  
High Substrate ◽  
Hydrogenated Amorphous

A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures

1992 ◽  
Vol 258 ◽  
Author(s):  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate ◽  
Surface Mobility ◽  
Surface Hydrogen ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe idea of surface mobility of growth precursors determined material quality has been exploited by raising the substrate temperature above the conventional 250°C and the ensuing thermal depletion of the surface hydrogen coverage compensated by increasing the precursor flux (deposition rate) to prepare ultra low defect density hydrogenated amorphous silicon.

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
J. B. Boyce
Keyword(s):  
Energy Density ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Substrate Temperatures

ABSTRACTLaser crystallization of a-Si thin films has been shown to produce materials with enhanced electrical properties and devices that are faster and capable of carrying higher currents. The quality of these polycrystalline films depends on a number of parameters such as laser energy density, shot density, substrate temperature, and the quality of the starting material. We find that the average grain size and transport properties of laser crystallized amorphous silicon films increase substantially with laser energy density, increase only slightly with laser shot density, and are unaffected by substrate temperatures of up to 400°C. The best films are those processed in vacuum but films of fair quality can also be obtained in air and nitrogen atmospheres.

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

1999 ◽  
Vol 85 (11) ◽  
pp. 7914-7918 ◽  
Author(s):  
D. Toet ◽  
P. M. Smith ◽  
T. W. Sigmon ◽  
T. Takehara ◽  
C. C. Tsai ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Structural Characterization ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous
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