Optoelectronic and structural properties of polysilicon produced by excimer laser and furnace crystallisation of hydrogenated amorphous silicon (a-Si:H)

1994 ◽  
Vol 141 (1) ◽  
pp. 15 ◽  
Author(s):  
T.E. Dyer ◽  
J.M. Marshall ◽  
W. Pickin ◽  
A.R. Hepburn ◽  
.F. Davies
Keyword(s):  
Amorphous Silicon ◽  
Structural Properties ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Structural properties of Li-doped hydrogenated amorphous silicon

1991 ◽  
Vol 137-138 ◽  
pp. 107-110 ◽  
Author(s):  
K. Pierz ◽  
M. Stutzmann ◽  
S. Zollner ◽  
W. Beyer ◽  
C. Brillerty
Keyword(s):  
Amorphous Silicon ◽  
Structural Properties ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Carluccio ◽  
A. Pecora ◽  
G. Fortunato ◽  
J. Stoemenos ◽  
N. Economou
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Solidification Velocity ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTExcimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

Sign in / Sign up

Export Citation Format

Share Document