scholarly journals Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon

2007 ◽  
Vol 90 (17) ◽  
pp. 171912 ◽  
Author(s):  
A. A. D. T. Adikaari ◽  
N. K. Mudugamuwa ◽  
S. R. P. Silva
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Pulse Profile ◽  
Excimer Laser Crystallization ◽  
Asymmetric Pulse

High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Carluccio ◽  
A. Pecora ◽  
G. Fortunato ◽  
J. Stoemenos ◽  
N. Economou
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Solidification Velocity ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTExcimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

Excimer laser crystallization of hydrogenated amorphous silicon

1996 ◽  
Author(s):  
Yongbin Dai ◽  
Zhongyang Xu ◽  
Changan Wang ◽  
Shaoquiang Zhang ◽  
Chengwu An ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Excimer Laser Crystallization ◽  
Hydrogenated Amorphous

A Simple Lateral Grain Growth of Poly-Si by Single Excimer Laser Crystallization of Amorphous Silicon Film Deposited on Polygon Shaped Trench

2003 ◽  
Vol 762 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Su-Hyuk Kang ◽  
Hee-Sun Shin ◽  
Min-Koo Han
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Excimer Laser ◽  
Silicon Film ◽  
Acute Angle ◽  
Molten Silicon ◽  
Laser Crystallization ◽  
Amorphous Silicon Film ◽  
Excimer Laser Irradiation ◽  
Excimer Laser Crystallization

AbstractA simple lateral grain growth of polysilicon employing single excimer laser irradiation is proposed. In order to increase the size of silicon grain and to control the location of the large lateral grain, the oxide trench is employed under the amorphous silicon film in the proposed method. The proposed oxide trench, which is shaped like a triangle or a polygon with an acute angle, induces temperature gradient on the molten silicon film during the solidification. It was verified by SEM that about 2 μm-long silicon grains are successfully achieved near the oxide trench edge and the locations of lateral grains are controlled by the angular points of the diagram.

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