Selective Area Excimer‐Laser Crystallization of Amorphous Silicon Thin Films

1999 ◽  
Vol 146 (12) ◽  
pp. 4605-4610 ◽  
Author(s):  
John Viatella ◽  
Seung‐Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Selective Area ◽  
Excimer Laser Crystallization

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films

1995 ◽  
Vol 34 (Part 1, No. 4A) ◽  
pp. 1759-1764 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Wen-Chang Yeh ◽  
Takeo Hattori ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Pulse Duration ◽  
Excimer Laser ◽  
Light Pulse ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization
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