Antimonide e-SWIR, MWIR, and LWIR barrier infrared detector and focal plane array development

2018 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Sir B. Rafol ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

2018 ◽  
Vol 113 (2) ◽  
pp. 021101 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir B. Rafol ◽  
Sam A. Keo ◽  
...  
Keyword(s):  
Focal Plane ◽  
Operating Temperature ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
High Operating Temperature

scholarly journals InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 806 ◽  
Author(s):  
Gamini Ariyawansa ◽  
Joshua Duran ◽  
Charles Reyner ◽  
John Scheihing
Keyword(s):  
High Temperature ◽  
Quantum Efficiency ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Integration Time ◽  
Strained Layer ◽  
Detector Structure ◽  
Strained Layer Superlattice ◽  
High Temperature Operation

This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10−4 A/cm2, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.

All-GaAs/AlGaAs readout circuit for quantum-well infrared detector focal plane array

1997 ◽  
Vol 44 (11) ◽  
pp. 1807-1812 ◽  
Author(s):  
V. Umansky ◽  
G. Bunin ◽  
K. Gartsman ◽  
C. Sharman ◽  
R. Almuhannad ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Readout Circuit

Performance of an optimized substrate-free focal plane array for optical readout uncooled infrared detector

2009 ◽  
Vol 105 (3) ◽  
pp. 034505 ◽  
Author(s):  
Teng Cheng ◽  
Qingchuan Zhang ◽  
Dapeng Chen ◽  
Haitao Shi ◽  
Jie Gao ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Optical Readout

Structural Stress Analysis of 16×16 InSb Infrared Focal Plane Array with Underfill

2011 ◽  
Vol 121-126 ◽  
pp. 4320-4324
Author(s):  
Qian Yu ◽  
Li Wen Zhang ◽  
Qing Duan Meng
Keyword(s):  
Integrated Circuits ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Fracture Probability ◽  
Von Mises Stress ◽  
Array Detector ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Von Mises

To reduce the fracture probability of InSb infrared detector in thermal shock from room temperature to 77K, for 16×16 mesa structure InSb infrared focal plane array detector with underfill, here ANSYS, is employed to research the impacts from both indium bump diameters and heights on both Von Mises stress and its distribution. Simulation results show that when the diameters of indium bump increases from 20µm to 36µm in step of 4µm, the maximal Von Mises stress in the InSb chip increases slowly. Besides, when the height of indium bump increases from 8μm to 24μm in step of 8μm, the maximal Von Mises stress in the InSb chip reduces from 1200MPa to 1030MPa. Von Mises stress of Si readout integrated circuits is also much smaller than that of InSb chip.

320 x 256 complementary barrier infrared detector focal plane array for long-wave infrared imaging

2012 ◽  
Author(s):  
Jean Nguyen ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoskhlagh ◽  
David Z.-Y. Ting ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Imaging ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Long Wave ◽  
Long Wave Infrared
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