CdS thin films prepared by continuous wave Nd:YAG laser

1995 ◽  
Author(s):  
H. Wang ◽  
Eric W. Tenpas ◽  
Khanh D. Vuong ◽  
James A. Williams ◽  
E. Schuesselbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Continuous Wave ◽  
Cds Thin Films

CW Nd:YAG Laser Deposition of CdS Thin Films

1992 ◽  
Vol 281 ◽  
Author(s):  
X. W. Wang ◽  
D. J. Finnigan ◽  
R. Noble ◽  
P. Mattocks
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Substrate Material ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Physical Measurements ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Diffraction Patterns ◽  
Two Phases

ABSTRACTThere are two phases of CdS, wurtzite (hexagonal) and zincblende (cubic). To the best of our knowledge there is no report on the growth of large single crystal cubic CdS. Although there have been reports on the vapor deposition of cubic dominated CdS thin films, physical measurements were limited. Substrate material has been considered as the primary factor in attaining the cubic dominated CdS thin films. We report new results on CW Nd:YAG laser deposition of CdS thin films at various temperatures. X-ray diffraction patterns show that the films deposited at 200°C have a dominant cubic phase, those at 400°C being hexagonal. Optical transmission measurements reveal room temperature absorption edges of 515nm and 500nm for films deposited at 200°C and 400°C, respectively. Transmission electron microscopy further reveals differences in crystal structure of the two films. Raman spectra of the cubic film is similar to that of the hexagonal film.

Rapid laser annealing of Cu(In,Ga)Se2 thin films by using a continuous wave Nd:YAG laser (λ0= 532 nm)

2017 ◽  
Vol 70 (8) ◽  
pp. 809-815 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil Ju Ko ◽  
Geum-Bae Cho ◽  
Chan Il Park
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm ◽  
Rapid Laser Annealing

Fabrication of CDS Thin Films Using Continuous Wave Laser Evaporation

1995 ◽  
Vol 397 ◽  
Author(s):  
E.W. Tenpas ◽  
K. D. Vuong ◽  
S. Orloff ◽  
J.G. Fagan ◽  
V. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Continuous Wave ◽  
Soda Lime ◽  
Laser Evaporation ◽  
Transmission Electron Microscopy Analysis ◽  
Electron Microscopy Analysis ◽  
Size Groups ◽  
Cds Thin Films ◽  
Glass Silica ◽  
Different Grain Size

ABSTRACTWe report new results on continuous wave Nd: YAG laser deposition of Cadmium Sulfide (CdS) thin films. Substrates were soda-lime silicate (SLS) glass, silica glass, silicon, alumina, and copper coated formvar sheets. As-deposited films were characteristically mixtures of cubic and hexagonal phases. X-ray diffraction analysis reveals that two different grain size groups are present. As revealed by SEM micrographs, films had smooth surface morphology. Transmission electron microscopy analysis reveals that grain sizes were extremely small. Also, semiconductive behavior was noted.

Continous wave Nd:YAG laser deposition of CdS thin films

1992 ◽  
Vol 218 (1-2) ◽  
pp. 157-160 ◽  
Author(s):  
X.W Wang ◽  
F Spitulnik ◽  
B Campell ◽  
R Noble ◽  
R.P Hapanowicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Deposition ◽  
Cds Thin Films

Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

2017 ◽  
Vol 71 (12) ◽  
pp. 1038-1047 ◽  
Author(s):  
Myoung Han Yoo ◽  
Pil Ju Ko ◽  
Nam-Hoon Kim ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Films ◽  
Annealing Time ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films
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