Rapid laser annealing of Cu(In,Ga)Se2 thin films by using a continuous wave Nd:YAG laser (λ0= 532 nm)

2017 ◽  
Vol 70 (8) ◽  
pp. 809-815 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil Ju Ko ◽  
Geum-Bae Cho ◽  
Chan Il Park
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm ◽  
Rapid Laser Annealing

Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

2017 ◽  
Vol 71 (12) ◽  
pp. 1038-1047 ◽  
Author(s):  
Myoung Han Yoo ◽  
Pil Ju Ko ◽  
Nam-Hoon Kim ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Films ◽  
Annealing Time ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm

scholarly journals Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 999
Author(s):  
Jeongsang Pyo ◽  
Bohae Lee ◽  
Han-Youl Ryu
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Laser Annealing ◽  
Continuous Wave ◽  
Volume Fraction ◽  
Three Dimensional ◽  
Green Laser ◽  
Blue Laser ◽  
Good Crystallinity

We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in an amorphous silicon (a-Si) thin film, and GLA and BLA experiments were conducted based on the thermal simulation results. The crystallinity of annealed poly Si samples was analyzed using Raman spectroscopy and spectroscopic ellipsometry. To evaluate the degree of crystallization for the annealed samples quantitatively, the measured spectra of laser-annealed poly Si were fitted to those of crystalline Si and a-Si, and the crystal volume fraction (fc) of the annealed poly Si sample was determined. Both the Raman spectroscopy and ellipsometry showed consistent results on fc. The fc values were found to reach >85% for optimum laser power of GLA and BLA, showing good crystallinity of the laser-annealed poly Si thin films comparable to thermal furnace annealing.

CdS thin films prepared by continuous wave Nd:YAG laser

1995 ◽  
Author(s):  
H. Wang ◽  
Eric W. Tenpas ◽  
Khanh D. Vuong ◽  
James A. Williams ◽  
E. Schuesselbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Continuous Wave ◽  
Cds Thin Films

Comparative study on crystallinity of laser-annealed polysilicon thin films for various laser sources

2021 ◽  
Vol 11 (7) ◽  
pp. 1239-1244
Author(s):  
Jeongsang Pyo ◽  
Han-You Ryu
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Continuous Wave ◽  
Pulsed Laser ◽  
Silicon Layer ◽  
Thermal Simulation ◽  
Blue Laser ◽  
Silicon Thin Films ◽  
Near Ultraviolet ◽  
Simulation Results

In this study, we compared the crystallinities of polycrystalline silicon thin films annealed using green laser annealing (GLA) with a 532-nm pulsed laser, near-ultraviolet laser annealing (NULA) with a 355-nm pulsed laser, and blue laser diode annealing (BLDA) with 450-nm continuous-wave (CW) lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in a 100 nm-thick amorphous silicon layer, and optimum laser conditions were determined for each laser annealing. GLA, NULA, and BLDA experiments were conducted based on the thermal simulation results, and the crystallinity of the annealed samples was quantitatively analyzed via spectroscopic ellipsometry. The analysis results indicated that GLA and BLDA resulted in good crystallinity that was comparable to the result of furnace annealing, whereas NULA resulted in a relatively poor crystal quality. The difference in the crystallinities produced by the annealing lasers could be explained using the thermal simulation results. This study provides an insight into the optimum laser annealing conditions for realizing high-quality poly-silicon thin films.

Evaluation of the Significance of Constant Laser Therapy, 532 nm, in Various Exposure Times on the Healing Process of Wounds Infected by Acinetobacter baumannii

2021 ◽  
pp. 153473462098403
Author(s):  
Zahra Al-Timimi
Keyword(s):  
Acinetobacter Baumannii ◽  
Laser Therapy ◽  
Continuous Wave ◽  
Healing Process ◽  
Positive Influence ◽  
Semiconductor Diode ◽  
Thickness Skin ◽  
Scale Range ◽  
The Times ◽  
532 Nm

Many considerable investigations focused on the stimulation of therapeutic manners of infected injuries in mice. The exaggerated pathogens that induced wounds were gram-positive like staphylococcal and gram-negative, for example, Pseudomonas aeuroginosa and Acinetobacter baumannii. Acinetobacter can generate a scale range of an infection that may be received in a hospital or any wellness concern facility. In order to know the significance of laser 532 nm with a constant irradiance at various exposure times on the healing process of wounds infected by Acinetobacter baumannii, this study was performed on the BALB/C mice. An elliptical full-thickness skin injury was made on the backside of 45 adult female (BALB/C) mice. Injuries were affected via Acinetobacter baumannii and were randomly assigned into 3 groups. Semiconductor diode continuous wave laser, λ = 532 nm, with output power 40 mW was used. The power density was 5.71 mW/cm2, while the fluencies were 1.7 J/cm2 and 5.14 J/cm2. Fifteen mice were classified according to the times of irradiation. The first group was infected and presented as control, without irradiation. The second group was infected and irradiated for 5 minutes. The third group, likewise, was infected but irradiated for 15 minutes. All groups were subdivided according to the following period, 3, 5, and 10 days, after irradiation and the animals were killed after the treatment. Wound healing was made by measuring the rate of wound closure and histopathological evaluation. The study determined that 532 nm laser therapy had an obvious and positive influence on the healing of infected wounds with fluence (5.14 J/cm2).

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Preparation of BaTiO3 thin films using pulsed KrF laser deposition and IN SITU laser annealing

1998 ◽  
Vol 20 (1-4) ◽  
pp. 87-94
Author(s):  
Atsushi Ito ◽  
Akihiko Machida ◽  
Minoru Obara
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Laser Deposition ◽  
Krf Laser
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