Fabrication of CDS Thin Films Using Continuous Wave Laser Evaporation

1995 ◽  
Vol 397 ◽  
Author(s):  
E.W. Tenpas ◽  
K. D. Vuong ◽  
S. Orloff ◽  
J.G. Fagan ◽  
V. Wu ◽  
...  

ABSTRACTWe report new results on continuous wave Nd: YAG laser deposition of Cadmium Sulfide (CdS) thin films. Substrates were soda-lime silicate (SLS) glass, silica glass, silicon, alumina, and copper coated formvar sheets. As-deposited films were characteristically mixtures of cubic and hexagonal phases. X-ray diffraction analysis reveals that two different grain size groups are present. As revealed by SEM micrographs, films had smooth surface morphology. Transmission electron microscopy analysis reveals that grain sizes were extremely small. Also, semiconductive behavior was noted.

1988 ◽  
Vol 52 (13) ◽  
pp. 1095-1097 ◽  
Author(s):  
H. S. Kwok ◽  
J. P. Zheng ◽  
S. Witanachchi ◽  
P. Mattocks ◽  
L. Shi ◽  
...  

Open Physics ◽  
2013 ◽  
Vol 11 (2) ◽  
Author(s):  
Karolina Sieradzka ◽  
Danuta Kaczmarek ◽  
Jerzy Morgiel ◽  
Jaroslaw Domaradzki ◽  
Eugeniusz Prociow ◽  
...  

AbstractTransparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.


2007 ◽  
Vol 22 (8) ◽  
pp. 2102-2110 ◽  
Author(s):  
Riad Nechache ◽  
Louis-Philippe Carignan ◽  
Lina Gunawan ◽  
Catalin Harnagea ◽  
Gianluigi A. Botton ◽  
...  

Epitaxial thin films of Bi2FeCrO6 (BFCO) have been synthesized by pulsed laser deposition on SrRuO3 on (100)- and (111)-oriented SrTiO3 substrates. Detailed x-ray diffraction and cross-section transmission electron microscopy analysis revealed a double perovskite crystal structure of the BFCO epitaxial films very similar to that of BiFeO3 along with a particularly noteworthy Fe3+/Cr3+ cation ordering along the [111] direction. The films contain no detectable magnetic iron oxide impurities and have the correct cationic average stoichiometry throughout their thickness. They however exhibit a slight modulation in the Fe and Cr compositions forming complementary stripe patterns, suggesting minor local excess or depletion of Fe and Cr. The epitaxial BFCO films exhibit good ferroelectric and piezoelectric properties, in addition to magnetic properties at room temperature, as well as an unexpected crystallographic orientation dependence of their room-temperature magnetic properties. Our results qualitatively confirm the predictions made using the ab initio calculations: the double perovskite structure of BFCO films exhibit a Fe3+/Cr3+ cation ordering and good multiferroic properties, along with the unpredicted existence of magnetic ordering at room temperature.


Author(s):  
A.F. Marshall

The defect microstructure of Cu- and Y-rich thin films of the high Tc superconductor YBa2Cu3O7−x (123) is of interest for several reasons. The highest Tc' reported for well-ordered stoichiometric films are typically 90-91 K. Post-annealed Cu- and Y-rich films may exhibit Tc's of 95-96 K. X-ray diffraction showed these non-stoichiometric films to be a highly faulted mixture of the 123 and 248 (Y2Ba4Cu8O16,Tc=80 K) phases. In situ films made by sputtering or electron beam evaporation typically show sharp but depressed Tc's (75-85 K); for our films these values approach 90 K when the films are Cu- and Y-rich. Both post annealed and in situ films exhibit high critical currents on and off stoichiometry; the pinning characteristics, which may be highly influenced by the defect microstructure, are superior for the in situ techniques.Transmission electron microscopy analysis shows that excess Cu and Y can be incorporated both as stacking fault (SF) defects and as second phase precipitates.


1990 ◽  
Vol 201 ◽  
Author(s):  
L. Shi ◽  
Y. Hashishin ◽  
S. Y. Dong ◽  
H. S. Kwok

AbstractWe have deposited CdS thin films onto substrates such as glass, sapphire and high Tc YBCO superconducting films by Nd:YAG laser evaporation in a vacuum environment. X-ray diffraction, optical and electrical measurements were used to study the deposited CdS films. The films are highly oriented with c-axis perpendicular to the surface and are optically smooth. The effects of laser fluence, substrate temperature on the film quality will be discussed. Additionally, Indium doped CdS films were also grown on sapphire substrates by laser deposition. In-situ resistivity measurements were employed to study the film formation process during laser deposition. A simple model was given to explain the in-situ resistivity data. Finally, a deposition temperature window was found to produce good quality CdS/YBCO heterostructures. The superconducting transition temperature of the YBCO films was degraded to 68K from an original Tc of 85 K after CdS deposition. The degradation of the superconducting properties was found mainly due to the interactions in the interface region.


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