Continuous-wave Nd:YAG laser deposition of CdS thin films with cubic phase

1993 ◽  
Author(s):  
Xing W. Wang ◽  
D. J. Finnigan
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Continuous Wave ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Cds Thin Films

CW Nd:YAG Laser Deposition of CdS Thin Films

1992 ◽  
Vol 281 ◽  
Author(s):  
X. W. Wang ◽  
D. J. Finnigan ◽  
R. Noble ◽  
P. Mattocks
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Substrate Material ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Physical Measurements ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Diffraction Patterns ◽  
Two Phases

ABSTRACTThere are two phases of CdS, wurtzite (hexagonal) and zincblende (cubic). To the best of our knowledge there is no report on the growth of large single crystal cubic CdS. Although there have been reports on the vapor deposition of cubic dominated CdS thin films, physical measurements were limited. Substrate material has been considered as the primary factor in attaining the cubic dominated CdS thin films. We report new results on CW Nd:YAG laser deposition of CdS thin films at various temperatures. X-ray diffraction patterns show that the films deposited at 200°C have a dominant cubic phase, those at 400°C being hexagonal. Optical transmission measurements reveal room temperature absorption edges of 515nm and 500nm for films deposited at 200°C and 400°C, respectively. Transmission electron microscopy further reveals differences in crystal structure of the two films. Raman spectra of the cubic film is similar to that of the hexagonal film.

Continous wave Nd:YAG laser deposition of CdS thin films

1992 ◽  
Vol 218 (1-2) ◽  
pp. 157-160 ◽  
Author(s):  
X.W Wang ◽  
F Spitulnik ◽  
B Campell ◽  
R Noble ◽  
R.P Hapanowicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Deposition ◽  
Cds Thin Films

CdS thin films prepared by continuous wave Nd:YAG laser

1995 ◽  
Author(s):  
H. Wang ◽  
Eric W. Tenpas ◽  
Khanh D. Vuong ◽  
James A. Williams ◽  
E. Schuesselbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Continuous Wave ◽  
Cds Thin Films

Highly Doped P-Type, N-Type CdS Thin Films and Diodes

1993 ◽  
Vol 329 ◽  
Author(s):  
Wen P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Process ◽  
Laser Deposition ◽  
Post Annealing ◽  
Gaas Substrates ◽  
Cds Thin Film ◽  
Good Crystalline Quality ◽  
Cds Thin Films ◽  
P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

Pulsed laser deposition process of PLZT thin films using an infrared Nd:YAG laser

2006 ◽  
Vol 252 (10) ◽  
pp. 3783-3788 ◽  
Author(s):  
T. García ◽  
E. de Posada ◽  
P. Bartolo-Pérez ◽  
J.L. Peña ◽  
R. Diamant ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Plzt Thin Films

Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

2004 ◽  
Vol 818 ◽  
Author(s):  
H. Kawasaki ◽  
Y. Suda ◽  
T. Ohshima ◽  
T. Ueda ◽  
S. Nakashima
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Nano Particles ◽  
Laser Deposition ◽  
Laser Beams ◽  
Silicon Carbon

AbstractWe have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

Rapid laser annealing of Cu(In,Ga)Se2 thin films by using a continuous wave Nd:YAG laser (λ0= 532 nm)

2017 ◽  
Vol 70 (8) ◽  
pp. 809-815 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Pil Ju Ko ◽  
Geum-Bae Cho ◽  
Chan Il Park
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
532 Nm ◽  
Rapid Laser Annealing
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