Use of ion beam sputtering in the fabrication of high-quality optical coatings for laser and telecommunication applications

1995 ◽  
Author(s):  
Arthur T. Howe
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Beam Sputtering

Physical and Electro-Optical Properties of Ion Beam Sputtered Thin Film PLZT Ceramic

1990 ◽  
Vol 200 ◽  
Author(s):  
L.L. Boyer ◽  
A.Y. Wu ◽  
J.R. Mcneil
Keyword(s):  
Ion Beam ◽  
Pyrochlore Structure ◽  
Surface Material ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Sputtered Films ◽  
Beam Sputtering ◽  
Perovskite Crystal ◽  
Plzt Thin Films ◽  
Deposited Films

ABSTRACTHigh quality PLZT thin films have been deposited using ion beam sputtering. The deposited material has perovskite crystal structure tetragonal in phase with the c-axis predominantly normal to the surface. Material deposited at temperatures below 450°C has pyrochlore structure while that deposited above 650°C displays polycrystalline characteristics. The deposition rate was approximately 0.2–0.5 Å/sec yielding film thicknesses of ∼4500 Å. The surface morphology of the deposited films is of high quality with a RMS roughness 60% that of magnetron sputtered films.

Ion beam sputtering of optical coatings

1994 ◽  
Author(s):  
A. F. Stewart ◽  
Samuel M. Lu ◽  
Mohammad M. Tehrani ◽  
C. Volk
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Magnetic and Transport Properties of Ion Beam Sputtered FE/CR Multilayers

1991 ◽  
Vol 231 ◽  
Author(s):  
K. Inomata ◽  
S.N. Okuno ◽  
S. Hashimoto ◽  
K. Yusu
Keyword(s):  
Magnetic Field ◽  
Elevated Temperature ◽  
Applied Field ◽  
Ion Beam ◽  
Magnetization Process ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Single Crystalline ◽  
Beam Sputtering ◽  
Acceleration Voltage

AbstractFe/Cr/Fe sandwiches and (Fe/Cr)n, multilayers were prepared by ion beam sputtering on MgO(100) substrates by changing acceleration voltages. Lower acceleration voltage was crucial to obtain multilayers with high quality interfaces.Single crystalline Fe/Cr/Fe sandwiches were prepared with ambient substrate temperature having a relation of Fe(100)<110>//MgO(100)<lO0>.On the substrates with elevated temperature above 150°C,however,polycrystalline films were grown.Magnetic coupling between Fe-layers through intervening Cr layers was investigated by FMR using 9.4GHz,in which three resonance lines were observed for single crystalline Fe/Cr/Fe sandwiches and (Fe/Cr)n multilayers with antiferromagnetic Fe-layer interactions,while a single resonance line was observed for the polycrystalline films.Magnetoresistance measured on (20AFe/12ACr)5 single crystalline multilayers showed anisotropy in saturation fields Hs which are about 2 times lower in the applied field parallel to Fe<100> than to Fe<l10>,which is consistent with the magnetization process for the films.It was found that the shapes of the magnetoresistance curve vs magnetic field differ for H//Fe<100> and H//Fe<110>.

High performances optical coatings with dual ion beam sputtering technique

2015 ◽  
Author(s):  
Hélène Krol ◽  
Catherine Grèzes-Besset ◽  
Didier Torricini ◽  
Dragan Stojcevski
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Large area precision optical coatings by reactive ion beam sputtering

2020 ◽  
Vol 59 (14) ◽  
pp. 4296
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
Kai Starke
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Beam Sputtering

High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 219-224 ◽  
Author(s):  
Gerard E. Henein ◽  
Juraj Topolancik ◽  
Kerry Siebein
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Breakdown Field ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Junction Area ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Beam Sputtering ◽  
Current Voltage Characteristics

ABSTRACTWe have deposited dense and pinhole-free thin films of SiO2, Al2O3 and ITO at room temperature via ion beam sputtering. The SiO2 films were found to be of similar quality as thermal oxide with a resistivity greater than 1015 Ω·cm and breakdown field in excess of 7 MV/cm. The Al2O3 films were part of a Pt- Al2O3-Pt vertical tunnel junction and were kept extremely thin, from 2 nm to 4 nm. The current-voltage characteristics of these junctions indicated a breakdown field in excess of 20 MV/cm, roughly twice that achieved by ALD films. This breakdown voltage was found to be independent of junction area, strongly suggesting the absence of pinholes in the film. The ITO films were 50 nm to 100 nm thick. As deposited, they are fully transparent with an electrical resistivity of 5x10-4 Ω·cm.

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