Large area precision optical coatings by reactive ion beam sputtering

2020 ◽  
Vol 59 (14) ◽  
pp. 4296
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
Kai Starke
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Beam Sputtering

Optimization of large area YBa2Cu3O7−x films by single target ion beam sputtering

1991 ◽  
Vol 185-189 ◽  
pp. 2563-2564 ◽  
Author(s):  
A. Gauzzi ◽  
M.L. Lucia ◽  
M. Affronte ◽  
D. Pavuna
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Single Target ◽  
Beam Sputtering

Large area superconducting YBa2Cu3O7-x films grown by single target ion beam sputtering

1991 ◽  
Vol 182 (1-3) ◽  
pp. 57-61 ◽  
Author(s):  
Andrea Gauzzi ◽  
Maria L. Lucía ◽  
Bruce J. Kellett ◽  
Jonathan H. James ◽  
Davor Pavuna
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Single Target ◽  
Beam Sputtering

Elecitrical Properties of Ion Beam Sputtering Grown Epitaxial Yttria Stabilized Zirconia FIlms on Silicon

1990 ◽  
Vol 198 ◽  
Author(s):  
P. Hesto ◽  
C. Pellet ◽  
C. Schwebel ◽  
E. Dupont-Nivet ◽  
A.Le Noxaic
Keyword(s):  
Electric Field ◽  
Ion Beam ◽  
Dielectric Strength ◽  
Yttria Stabilized Zirconia ◽  
Flat Band ◽  
Ion Beam Sputtering ◽  
Stabilized Zirconia ◽  
Large Area ◽  
Beam Sputtering ◽  
Valence Bands

ABSTRACTYttria stabilized zirconia (YSZ) films have been characterized. The refractive index measured by ellipsometry is about 2.1. The breakdown electric field is greater than 4MV/cm for small area capacitors with a decrease for large area capacitors. This dielectric strength is weakly dependent on the film thickness within the range 0.2-1.lμm. The analysis of the 1MHz C(V) curves by the Terman method leads to a density of interface states of the order of 1012cm−2eV−1 in the middle of the bandgap with an increase near the conduction and the valence bands. The sensitivity of zirconia to the irradiations has been characterized by analysing 1MHz C(V). With or without electric field applied during the irradiations, the Flat-Band voltage shifts are lower for YSZ films than for thermal silicon dioxide films (2 times smaller).

Angular‐resolved ion‐beam sputtering apparatus for large‐area deposition

1989 ◽  
Vol 60 (8) ◽  
pp. 2657-2665 ◽  
Author(s):  
T. Motohiro ◽  
H. Yamadera ◽  
Y. Taga
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Beam Sputtering ◽  
Area Deposition

Ion beam sputtering of optical coatings

1994 ◽  
Author(s):  
A. F. Stewart ◽  
Samuel M. Lu ◽  
Mohammad M. Tehrani ◽  
C. Volk
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

High performances optical coatings with dual ion beam sputtering technique

2015 ◽  
Author(s):  
Hélène Krol ◽  
Catherine Grèzes-Besset ◽  
Didier Torricini ◽  
Dragan Stojcevski
Keyword(s):  
Ion Beam ◽  
Optical Coatings ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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