High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 219-224 ◽  
Author(s):  
Gerard E. Henein ◽  
Juraj Topolancik ◽  
Kerry Siebein
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Breakdown Field ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Junction Area ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Beam Sputtering ◽  
Current Voltage Characteristics

ABSTRACTWe have deposited dense and pinhole-free thin films of SiO2, Al2O3 and ITO at room temperature via ion beam sputtering. The SiO2 films were found to be of similar quality as thermal oxide with a resistivity greater than 1015 Ω·cm and breakdown field in excess of 7 MV/cm. The Al2O3 films were part of a Pt- Al2O3-Pt vertical tunnel junction and were kept extremely thin, from 2 nm to 4 nm. The current-voltage characteristics of these junctions indicated a breakdown field in excess of 20 MV/cm, roughly twice that achieved by ALD films. This breakdown voltage was found to be independent of junction area, strongly suggesting the absence of pinholes in the film. The ITO films were 50 nm to 100 nm thick. As deposited, they are fully transparent with an electrical resistivity of 5x10-4 Ω·cm.

Cutoff Frequency Study on Nanocrystalline FeNbB Thin Films

2012 ◽  
Vol 465 ◽  
pp. 72-75
Author(s):  
Xiao Long Jiang ◽  
Y.J. Yao ◽  
M. Lai ◽  
K. Peng ◽  
Y.W. Du
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Ion Beam ◽  
Cutoff Frequency ◽  
Magnetic Behavior ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Beam Sputtering

A series of nanocrystalline FeNbB films were fabricated using ion-beam sputtering technique from FeNbB target. Pieces of these films were annealed for 1 hour at various temperatures up to 5730C. Room temperature soft magnetic properties of these films were measured. The influence of microstructure on magnetic behavior in nanocrystalline FeNbB films is investigated in a series of specimens with different film’s thickness. For the sample 120nm and 5000C annealed, cutoff frequency was found to be 5E7 Hz, which has the μf0=5E10.

On the Oriented Growth and Optical Property of ZnO Thin Films Deposited on NaCl (001) Substrate by Ion Beam Sputtering

2010 ◽  
Vol 121-122 ◽  
pp. 52-57
Author(s):  
Shih Wei Mao ◽  
Jung Hsiung Shen ◽  
Der Shin Gan ◽  
Hsing Lu Huang ◽  
Sung Wei Yeh
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Temperature Dependent ◽  
Epitaxial Relationship ◽  
Oriented Growth ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
High Resolution Tem

Temperature dependent oriented growth of ZnO thin film deposited on NaCl (001) substrates using ion beam sputtering was studied by transmission electron microscopy (TEM). Thin films showing a texture due to parallel epitaxy with NaCl (001) as deposited at 100 oC, whereas thin films deposited at 400 oC can form a texture. The microstructure and the epitaxial relationship with the NaCl (001) plane were studied by a high-resolution TEM. The possible causes for the orientation changed with temperature are discussed. The optical transparency of the nanofilms grown from room temperature to 400 oC was measured.

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