Physical and Electro-Optical Properties of Ion Beam Sputtered Thin Film PLZT Ceramic

1990 ◽  
Vol 200 ◽  
Author(s):  
L.L. Boyer ◽  
A.Y. Wu ◽  
J.R. Mcneil
Keyword(s):  
Ion Beam ◽  
Pyrochlore Structure ◽  
Surface Material ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Sputtered Films ◽  
Beam Sputtering ◽  
Perovskite Crystal ◽  
Plzt Thin Films ◽  
Deposited Films

ABSTRACTHigh quality PLZT thin films have been deposited using ion beam sputtering. The deposited material has perovskite crystal structure tetragonal in phase with the c-axis predominantly normal to the surface. Material deposited at temperatures below 450°C has pyrochlore structure while that deposited above 650°C displays polycrystalline characteristics. The deposition rate was approximately 0.2–0.5 Å/sec yielding film thicknesses of ∼4500 Å. The surface morphology of the deposited films is of high quality with a RMS roughness 60% that of magnetron sputtered films.

TfC16. Growth of perovksite PLZT thin films by dual ion beam sputtering

1992 ◽  
Vol 134 (1) ◽  
pp. 297-302 ◽  
Author(s):  
D. A. Tossell ◽  
N. M. Shorrocks ◽  
J. S. Obhi ◽  
R. W. Whatmore
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Plzt Thin Films ◽  
Dual Ion Beam Sputtering

In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

1999 ◽  
Vol 569 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Ion Beam ◽  
Oxygen Deficiency ◽  
Ion Beam Sputtering ◽  
Optical Absorption Peak ◽  
Beam Sputtering ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTThe optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

Contamination Effects in Mo/Ni Superlattices

1991 ◽  
Vol 229 ◽  
Author(s):  
Steven M. Hues ◽  
John L. Makous
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Bilayer Thickness ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Impurity Incorporation ◽  
X Ray ◽  
Beam Sputtering ◽  
Deposited Films

AbstractA softening of the shear elastic constant c44 has been observed previously in Mo/Ni superlattices as a function of decreasing bilayer thickness below approximately 100 Å.[1] We have prepared a series of Mo/Ni superlattice films by ion beam sputtering doped with varying concentrations of either aluminum or oxygen. The chemical and structural properties of these films were then determined using x-ray diffraction (XRD) and Auger electron spectroscopy (AES). The shear elastic properties were characterized by measuring the surface acoustic wave (SAW) velocity of the deposited films. We demonstrate structural and elastic property effects resulting from Al and O impurity incorporation in Mo/Ni multilayers.

(Mn,Zn,Fe)1−xO thin films showing ferrimagnetic property deposited by ion beam sputtering

1995 ◽  
Vol 10 (2) ◽  
pp. 274-279 ◽  
Author(s):  
Hae Seok Cho ◽  
Sang Ki Ha ◽  
Min Hong Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Moments ◽  
Spinel Ferrite ◽  
Oxygen Deficit ◽  
Crystallographic Structure ◽  
Ion Beam Sputtering ◽  
Zn Ferrite ◽  
Beam Sputtering ◽  
Deposited Films

We deposited (Mn,Zn,Fe)1−xO thin films of a wüstite structure on SiO2/Si(100) by ion beam sputtering using a single-crystal Mn-Zn ferrite target. The wüstite structure of the as-deposited film, confirmed by XRD, TEM, and XPS analysis, appeared to originate from an oxygen-deficit ambient and also from the preferential resputtering of the oxygen ions in films during deposition. The as-deposited films showed ferrimagnetic characteristics having quite a large Ms in spite of their crystallographic structure, wüstite. Such an unusual phenomenon is presumably due to the different magnetic moments of the constituent cations with disordered distribution. This wüstite phase could be transformed into the spinel ferrite phase with the same preferred orientation during postannealing under an appropriate oxygen partial pressure. The interplanar distance of the as-deposited films decreased with increasing Ts due to a release of compressive stress. The Ms of the film had a maximum value at about 275 °C, while the resistivity, mainly governed by the grain boundaries, was almost the same irrespective of Ts.

Magnetic and Transport Properties of Ion Beam Sputtered FE/CR Multilayers

1991 ◽  
Vol 231 ◽  
Author(s):  
K. Inomata ◽  
S.N. Okuno ◽  
S. Hashimoto ◽  
K. Yusu
Keyword(s):  
Magnetic Field ◽  
Elevated Temperature ◽  
Applied Field ◽  
Ion Beam ◽  
Magnetization Process ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Single Crystalline ◽  
Beam Sputtering ◽  
Acceleration Voltage

AbstractFe/Cr/Fe sandwiches and (Fe/Cr)n, multilayers were prepared by ion beam sputtering on MgO(100) substrates by changing acceleration voltages. Lower acceleration voltage was crucial to obtain multilayers with high quality interfaces.Single crystalline Fe/Cr/Fe sandwiches were prepared with ambient substrate temperature having a relation of Fe(100)<110>//MgO(100)<lO0>.On the substrates with elevated temperature above 150°C,however,polycrystalline films were grown.Magnetic coupling between Fe-layers through intervening Cr layers was investigated by FMR using 9.4GHz,in which three resonance lines were observed for single crystalline Fe/Cr/Fe sandwiches and (Fe/Cr)n multilayers with antiferromagnetic Fe-layer interactions,while a single resonance line was observed for the polycrystalline films.Magnetoresistance measured on (20AFe/12ACr)5 single crystalline multilayers showed anisotropy in saturation fields Hs which are about 2 times lower in the applied field parallel to Fe<100> than to Fe<l10>,which is consistent with the magnetization process for the films.It was found that the shapes of the magnetoresistance curve vs magnetic field differ for H//Fe<100> and H//Fe<110>.

Effects of the Substrate Temperature on the Crystallization and Development of Texture of Mn-Zn Ferrite thin Films Deposited by Ion Beam Sputtering

1993 ◽  
Vol 317 ◽  
Author(s):  
Hae Seok Cho ◽  
Sang Ki Ha ◽  
Min Hong Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Crystallographic Structure ◽  
Ion Beam Sputtering ◽  
Zn Ferrite ◽  
Beam Sputtering ◽  
Ferrite Thin Films ◽  
Deposited Films

ABSTRACTWe investigated the effects of the substrate temperature (Ts) on the crystallization and the development of texture of Mn-Zn ferrite thin films on SiO2/Si (100) under ion bombardment during ion beam sputtering. As-deposited films showed ferrimagnetic properties in spite of their crystallographic structure of wustite. The crystallographic structure of as-deposited films changed from (111) wustite structure to (222) spinel structure as oxygen partial pressure increased. The (222) preferred orientation seems to originate from oxygen-deficit ambient and preferential resputtering of oxygen ions in films during sputtering. The interplanar distance of the films deposited without oxygen flow decreased with increasing Ts due to release of compressive stress. The saturation Magnetization (Ms) of the film had maximum value at about 275°C, while the resistivity was almost of the same value irrespective of Ts. The unusual fact that crystallization and preferred orientation were less progressed at higher Ts was discussed.

High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 219-224 ◽  
Author(s):  
Gerard E. Henein ◽  
Juraj Topolancik ◽  
Kerry Siebein
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Breakdown Field ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Junction Area ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Beam Sputtering ◽  
Current Voltage Characteristics

ABSTRACTWe have deposited dense and pinhole-free thin films of SiO2, Al2O3 and ITO at room temperature via ion beam sputtering. The SiO2 films were found to be of similar quality as thermal oxide with a resistivity greater than 1015 Ω·cm and breakdown field in excess of 7 MV/cm. The Al2O3 films were part of a Pt- Al2O3-Pt vertical tunnel junction and were kept extremely thin, from 2 nm to 4 nm. The current-voltage characteristics of these junctions indicated a breakdown field in excess of 20 MV/cm, roughly twice that achieved by ALD films. This breakdown voltage was found to be independent of junction area, strongly suggesting the absence of pinholes in the film. The ITO films were 50 nm to 100 nm thick. As deposited, they are fully transparent with an electrical resistivity of 5x10-4 Ω·cm.

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