Magnetic and Transport Properties of Ion Beam Sputtered FE/CR Multilayers

1991 ◽  
Vol 231 ◽  
Author(s):  
K. Inomata ◽  
S.N. Okuno ◽  
S. Hashimoto ◽  
K. Yusu
Keyword(s):  
Magnetic Field ◽  
Elevated Temperature ◽  
Applied Field ◽  
Ion Beam ◽  
Magnetization Process ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Single Crystalline ◽  
Beam Sputtering ◽  
Acceleration Voltage

AbstractFe/Cr/Fe sandwiches and (Fe/Cr)n, multilayers were prepared by ion beam sputtering on MgO(100) substrates by changing acceleration voltages. Lower acceleration voltage was crucial to obtain multilayers with high quality interfaces.Single crystalline Fe/Cr/Fe sandwiches were prepared with ambient substrate temperature having a relation of Fe(100)<110>//MgO(100)<lO0>.On the substrates with elevated temperature above 150°C,however,polycrystalline films were grown.Magnetic coupling between Fe-layers through intervening Cr layers was investigated by FMR using 9.4GHz,in which three resonance lines were observed for single crystalline Fe/Cr/Fe sandwiches and (Fe/Cr)n multilayers with antiferromagnetic Fe-layer interactions,while a single resonance line was observed for the polycrystalline films.Magnetoresistance measured on (20AFe/12ACr)5 single crystalline multilayers showed anisotropy in saturation fields Hs which are about 2 times lower in the applied field parallel to Fe<100> than to Fe<l10>,which is consistent with the magnetization process for the films.It was found that the shapes of the magnetoresistance curve vs magnetic field differ for H//Fe<100> and H//Fe<110>.

Towards a magnetic field separation in Ion Beam Sputtering processes

2015 ◽  
Vol 592 ◽  
pp. 271-275 ◽  
Author(s):  
Sina Malobabic ◽  
Marco Jupé ◽  
Puja Kadhkoda ◽  
Detlev Ristau
Keyword(s):  
Magnetic Field ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Field Separation

Physical and Electro-Optical Properties of Ion Beam Sputtered Thin Film PLZT Ceramic

1990 ◽  
Vol 200 ◽  
Author(s):  
L.L. Boyer ◽  
A.Y. Wu ◽  
J.R. Mcneil
Keyword(s):  
Ion Beam ◽  
Pyrochlore Structure ◽  
Surface Material ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Sputtered Films ◽  
Beam Sputtering ◽  
Perovskite Crystal ◽  
Plzt Thin Films ◽  
Deposited Films

ABSTRACTHigh quality PLZT thin films have been deposited using ion beam sputtering. The deposited material has perovskite crystal structure tetragonal in phase with the c-axis predominantly normal to the surface. Material deposited at temperatures below 450°C has pyrochlore structure while that deposited above 650°C displays polycrystalline characteristics. The deposition rate was approximately 0.2–0.5 Å/sec yielding film thicknesses of ∼4500 Å. The surface morphology of the deposited films is of high quality with a RMS roughness 60% that of magnetron sputtered films.

High Quality Oxide Films Deposited at Room Temperature by Ion Beam Sputtering

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 219-224 ◽  
Author(s):  
Gerard E. Henein ◽  
Juraj Topolancik ◽  
Kerry Siebein
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Breakdown Field ◽  
Ion Beam Sputtering ◽  
High Quality ◽  
Junction Area ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Beam Sputtering ◽  
Current Voltage Characteristics

ABSTRACTWe have deposited dense and pinhole-free thin films of SiO2, Al2O3 and ITO at room temperature via ion beam sputtering. The SiO2 films were found to be of similar quality as thermal oxide with a resistivity greater than 1015 Ω·cm and breakdown field in excess of 7 MV/cm. The Al2O3 films were part of a Pt- Al2O3-Pt vertical tunnel junction and were kept extremely thin, from 2 nm to 4 nm. The current-voltage characteristics of these junctions indicated a breakdown field in excess of 20 MV/cm, roughly twice that achieved by ALD films. This breakdown voltage was found to be independent of junction area, strongly suggesting the absence of pinholes in the film. The ITO films were 50 nm to 100 nm thick. As deposited, they are fully transparent with an electrical resistivity of 5x10-4 Ω·cm.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Sign in / Sign up

Export Citation Format

Share Document