High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

1994 ◽  
Author(s):  
Ze-Qiang Yao ◽  
H. Barry Harrison ◽  
Sima Dimitrijev ◽  
Y. T. Yeow
Keyword(s):  
Nitric Oxide ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dielectric Films ◽  
High Quality

Rapid Thermal Processing of Gate Dielectric Films and their Characterization

1987 ◽  
Vol 92 ◽  
Author(s):  
D. L. Flowers ◽  
J. Nulman ◽  
J. P. Krusius
Keyword(s):  
Integrated Circuits ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Defect Density ◽  
Rapid Thermal Processing ◽  
Dielectric Films ◽  
Mobile Charge ◽  
High Quality ◽  
Temperature Constraint ◽  
Low Levels

ABSTRACTRapid thermal processing has been used to grow high quality, low defect density, low mobile charge, dielectric films of oxide and nitrided oxide. Suitable annealing can lower the fixed charge and interfacial trap density present in these filmsto acceptably low levels. Both RTA and RTN were shown to improve the dielectric properties of the grown oxides. These filmsshould be strong candidates for use in high density, shallow junction, integrated circuits where a minimal time/temperature constraint is imposed on further processing after diffusion.

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

Advanced Dram Cell Dielectric Films using Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Randhir P.S. Thakur ◽  
Viju K. Mathews ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Structural Characteristics ◽  
Rapid Thermal Processing ◽  
Random Access ◽  
Dielectric Materials ◽  
Nonlinear Dependence ◽  
Dielectric Films ◽  
Storage Node ◽  
Carrier Tunneling

ABSTRACTThe reliable operation of a dynamic random access memory (DRAM) device requires a minimum level of charge to be stored in the capacitor. The nonlinear dependence between the scaling of the minimum charge and the cell area for higher DRAM densities is the driving force in the development of exotic capacitor structures and advanced cell dielectric materials. The conventional option of reducing the thickness of the silicon nitride dielectric films for high density DRAM applications will eventually be constrained by the increase in the leakage current due to direct carrier tunneling or by the decrease in the oxidation resistance of the films.In this paper we discuss the use of rapid thermal processing to modify the interface between the polysilicon storage node of the capacitor and the silicon nitride to improve the electrical and structural characteristics without any loss in capacitance. The influence of electrode roughness on the electrical behavior will also be discussed for the various dielectric stack combinations.

Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
S. J. Lee ◽  
C. H. Lee ◽  
A. Y. Mao ◽  
R. Vrtis ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermal Processing ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Interface Properties ◽  
High Quality

ABSTRACTIn this paper, ultra thin CVD Ta2O5 stacked gate dielectrics (Teq∼14Å-22Å) was fabricated by in-situ RTP processing. The leakage current of Ta2O5 devices is 103× lower leakage current compared to SiO2 of identical thickness for devices with Teq between 18Å-22Å. While Teq<18Å, the leakage current follows same train and J∼10−3A/cm2 for Ta2O5 stacked gate dielectrics with Teq=14Å. Superior interface properties and reliability have been obtained.

Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Nulman ◽  
J. P. Krusius ◽  
P. Renteln
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Material Characterization ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Pure Oxygen ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

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