Electrical characterization of adhesive flip chip interconnects for microwave application

2008 ◽  
Vol 7 (2) ◽  
pp. 023007
Author(s):  
Jong-Woong Kim
Keyword(s):  
Flip Chip ◽  
Electrical Characterization ◽  
Microwave Application

Electrical Characterization of NCP- and NCF-Bonded Fine-Pitch Flip-Chip-on-Flexible Packages

2007 ◽  
Vol 30 (1) ◽  
pp. 142-147 ◽  
Author(s):  
Y. C. Chan ◽  
S. C. Tan ◽  
Nelson S. M. Lui ◽  
C. W. Tan
Keyword(s):  
Flip Chip ◽  
Electrical Characterization ◽  
Fine Pitch

Electrical Characterization of NCP- and NCF-Bonded Fine-Pitch Flip-Chip-on-Flexible Packages

2006 ◽  
Vol 29 (4) ◽  
pp. 735-740 ◽  
Author(s):  
Y. C. Chan ◽  
S. C. Tan ◽  
Nelson S. M. Lui ◽  
C. W. Tan
Keyword(s):  
Flip Chip ◽  
Electrical Characterization ◽  
Fine Pitch

Electrical Characterization of FCBGA Package Based on Measurement Approach for High-speed SOC Applications

2006 ◽  
Vol 3 (4) ◽  
pp. 216-225
Author(s):  
Ming-Kun Chen ◽  
Cheng-Chi Tai ◽  
Yu-Jung Huang
Keyword(s):  
Transmission Lines ◽  
High Speed ◽  
Flip Chip ◽  
Equivalent Circuit Model ◽  
Electrical Characterization ◽  
Time Domain Reflectometry ◽  
Electronic Market ◽  
Wide Range ◽  
The Time Domain

With high-speed computers and wireless communications system become more popular in the electronic market, these communication-oriented products require high packaging densities, clock rates and higher switching speeds over Gb/s. A multilayer flip-chip Ball grid array (FCBGA) package used for applications running at more than 1 Gb/s has been characterized in this work. Electrical characterization of the package becomes essential beyond 1 GHz considering that the interconnections on the package behave not only just as interconnections but also as transmission lines. In this paper, we present the measurement and simulation results for interconnection of an FCBGA package using the time domain reflectometry (TDR) method. Simulation and measurement results are compared to establish a proper equivalent circuit model of the FCBGA interconnections. The parasitics of the power network can be measured through TDR, vector network analyzer (VNA) and impedance analyzer (IA). The complete models generated in this work are targeted for high-speed system-on-chip (SOC) devices that have a wide range of uses across commercial electronic applications.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

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