Characterization and optimization of bonding and interconnect technology for 3D stacking thin dies

2021 ◽  
Vol 39 (5) ◽  
pp. 052207
Author(s):  
Pavani Vamsi Krishna Nittala ◽  
Karthika Haridas ◽  
Shivam Nigam ◽  
Saba Tasneem ◽  
Prosenjit Sen
Keyword(s):  
3D Stacking ◽  
Interconnect Technology

2.5D FPGA-HBM Integration Challenges

2017 ◽  
Vol 2017 (1) ◽  
pp. 000336-000341 ◽  
Author(s):  
Jaspreet Gandhi ◽  
Boon Ang ◽  
Tom Lee ◽  
Henley Liu ◽  
Myongseob Kim ◽  
...  
Keyword(s):  
Data Center ◽  
High Performance ◽  
Point Of View ◽  
Cloud Services ◽  
Lower Power ◽  
High Bandwidth ◽  
3D Stacking ◽  
Interconnect Technology ◽  
Performance Computing ◽  
Scale Data

Abstract FPGA partitioning and high density integration using interposer based 2.5D stacked silicon interconnect technology (SSIT) has been the pioneering work at Xilinx for several years enabling advanced applications in high performance computing, networking, hyper scale data center and cloud services etc. With the insatiable demand for acceleration workloads, FPGAs need to be coupled with in package memory to enable higher bandwidth, lower power and smaller form factor architecture. 3D stacking based high bandwidth memory (HBM) has paved the way to realize such applications providing 10X higher bandwidth, 4X lower power vs DDR4. This paper provides an overview of unique challenges involved with 2.5D FPGA-HBM SSIT integration from design, process/package development, test and reliability point of view

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Simultaneous Cu-Cu and Compliant Dielectric Bonding for 3D Stacking of ICs

2007 ◽  
Author(s):  
A. Jourdain ◽  
S. Stoukatch ◽  
P. De Moor ◽  
W. Ruythooren ◽  
S. Pargfrieder ◽  
...  
Keyword(s):  
3D Stacking

FET arrays as CPI sensors for 3D stacking and packaging characterization

2012 ◽  
Author(s):  
A. Ivankovic ◽  
V. Cherman ◽  
G. Van der Plas ◽  
B. Vandevelde ◽  
G. Beyer ◽  
...  
Keyword(s):  
3D Stacking
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