Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Vincent S. Smentkowski; Shubhodeep Goswami

doi:10.1116/6.0000905

Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000905 ◽

2021 ◽

Vol 39 (3) ◽

pp. 033204

Author(s):

Vincent S. Smentkowski ◽

Shubhodeep Goswami

Keyword(s):

Mass Spectroscopy ◽

Time Of Flight ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Optimized time-of-flight secondary ion mass spectroscopy depth profiling with a dual beam technique

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580874 ◽

1997 ◽

Vol 15 (3) ◽

pp. 460-464 ◽

Cited By ~ 99

Author(s):

K. Iltgen ◽

C. Bendel ◽

A. Benninghoven ◽

E. Niehuis

Keyword(s):

Mass Spectroscopy ◽

Time Of Flight ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Dual Beam ◽

Secondary Ion ◽

Beam Technique

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Secondary ion counting for surface-sensitive chemical analysis of organic compounds using time-of-flight secondary ion mass spectroscopy with cluster ion impact ionization

Review of Scientific Instruments ◽

10.1063/1.3541799 ◽

2011 ◽

Vol 82 (3) ◽

pp. 033101 ◽

Cited By ~ 9

Author(s):

K. Hirata ◽

Y. Saitoh ◽

A. Chiba ◽

K. Yamada ◽

Y. Takahashi ◽

...

Keyword(s):

Chemical Analysis ◽

Organic Compounds ◽

Mass Spectroscopy ◽

Impact Ionization ◽

Time Of Flight ◽

Secondary Ion Mass Spectroscopy ◽

Cluster Ion ◽

Ion Impact ◽

Secondary Ion

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Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

Journal of The Electrochemical Society ◽

10.1149/1.1362550 ◽

2001 ◽

Vol 148 (5) ◽

pp. F92 ◽

Cited By ~ 2

Author(s):

A. A. Efremov ◽

V. G. Litovchenko ◽

G. Ph. Romanova ◽

A. V. Sarikov ◽

C. Claeys

Keyword(s):

Computer Simulations ◽

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Buried Oxide ◽

Secondary Ion

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Quantitative Evaluation of Molecular Diffusion in Organic Planar Heterojunctions by Time-of-Flight Secondary Ion Mass Spectroscopy

ACS Omega ◽

10.1021/acsomega.7b01524 ◽

2018 ◽

Vol 3 (2) ◽

pp. 1522-1528 ◽

Cited By ~ 8

Author(s):

Kyohei Nakano ◽

Takahiro Shibamori ◽

Keisuke Tajima

Keyword(s):

Quantitative Evaluation ◽

Mass Spectroscopy ◽

Molecular Diffusion ◽

Time Of Flight ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1−xGex/Si heterojunction bipolar transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588463 ◽

1996 ◽

Vol 14 (1) ◽

pp. 287 ◽

Cited By ~ 5

Author(s):

D. Krüger

Keyword(s):

Mass Spectroscopy ◽

Heterojunction Bipolar Transistors ◽

Depth Profiling ◽

Bipolar Transistors ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1634957 ◽

2004 ◽

Vol 22 (1) ◽

pp. 341 ◽

Cited By ~ 3

Author(s):

E. de Chambost ◽

A. Merkulov ◽

M. Schuhmacher ◽

P. Peres

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Guide for Interpretation of Mass Spectral Data Acquired with Time-of-Flight Secondary Ion Mass Spectroscopy

10.1520/e2695 ◽

2009 ◽

Author(s):

Keyword(s):

Spectral Data ◽

Mass Spectroscopy ◽

Time Of Flight ◽

Mass Spectral Data ◽

Secondary Ion Mass Spectroscopy ◽

Mass Spectral ◽

Secondary Ion

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An investigation of the wear track on DLC (a-C:H) film by time-of-flight secondary ion mass spectroscopy

Surface and Coatings Technology ◽

10.1016/s0257-8972(01)01422-0 ◽

2001 ◽

Vol 146-147 ◽

pp. 378-383 ◽

Cited By ~ 29

Author(s):

Haruyo Fukui ◽

Miki Irie ◽

Yoshiharu Utsumi ◽

Kazuhiko Oda ◽

Hisanori Ohara

Keyword(s):

Mass Spectroscopy ◽

Wear Track ◽

Time Of Flight ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300

Vacuum ◽

10.1016/0042-207x(91)91191-p ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 592

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Primary Beam ◽

Secondary Ion Mass Spectroscopy ◽

Shallow Junctions ◽

Secondary Ion

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Determination of silicon oxide layer thickness by time-of-flight secondary ion mass spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590891 ◽

1999 ◽

Vol 17 (5) ◽

pp. 2191 ◽

Cited By ~ 5

Author(s):

O. Brox ◽

K. Iltgen ◽

S. Hellweg ◽

A. Benninghoven

Keyword(s):

Oxide Layer ◽

Layer Thickness ◽

Mass Spectroscopy ◽

Silicon Oxide ◽

Time Of Flight ◽

Oxide Layer Thickness ◽

Secondary Ion Mass Spectroscopy ◽

Silicon Oxide Layer ◽

Secondary Ion

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