Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing

1999 ◽  
Vol 75 (10) ◽  
pp. 1422-1424 ◽  
Author(s):  
A. Dutta ◽  
S. P. Lee ◽  
S. Hatatani ◽  
S. Oda
Keyword(s):  
Electron Beam ◽  
Tunnel Junction ◽  
Single Electron ◽  
Direct Writing ◽  
Silicon Based

Packaging Technology of Multi Deflection Arrays for Multi-Shaped Beam Lithography

2011 ◽  
Vol 2011 (1) ◽  
pp. 000600-000607 ◽  
Author(s):  
T. Burkhardt ◽  
M. Mohaupt ◽  
M. Hornaff ◽  
B. Zaage ◽  
E. Beckert ◽  
...  
Keyword(s):  
Electron Beam ◽  
Degrees Of Freedom ◽  
Printed Circuit Boards ◽  
Electrical Signal ◽  
Beam Deflection ◽  
Circuit Boards ◽  
Direct Writing ◽  
Soldering Process ◽  
Flexible Printed Circuit ◽  
Silicon Based

Multi-Shaped electron beam lithography is considered a promising approach for high throughput mask and direct writing. Providing multiple apertures and individually controlled electrodes it allows for massive parallelization of exposure shots, thus significantly decreasing write time. A silicon-based micro-structured MEMS multi-beam deflection array (MDA) featuring 8×8 apertures is presented. The hybrid integration of MDA devices in ceramic system carriers utilizing a laser-based Solderjet Bumping process is demonstrated. This flux-free soldering process provides adhesive-free, long term stable and vacuum compatible joints and is used for both mechanical fixation and electrical connection. Electron beam deflection in two perpendicular directions requires the highly accurate placement of two crossed MDA devices, which is carried out by three degrees of freedom alignment procedures and solder joining. Electrical signal routing within the electron optical column using flexible printed circuit boards and flux-free soldering is also reported. The precision adjustment of two carriers is accomplished by fiducial mark detection using image processing. Results on alignment accuracy in the sub-micron range, mechanical and electrical testing of such assemblies are reported.

Direct-Writing of Cu Nano-Patterns with an Electron Beam

2015 ◽  
Vol 21 (6) ◽  
pp. 1639-1643 ◽  
Author(s):  
Shih-En Lai ◽  
Ying-Jhan Hong ◽  
Yu-Ting Chen ◽  
Yu-Ting Kang ◽  
Pin Chang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Exposure Time ◽  
Metal Ion ◽  
Reduction Rate ◽  
Industrial Applications ◽  
Growth Stages ◽  
Sample Holder ◽  
Direct Writing ◽  
Transmission Electron ◽  
Aqueous Layer

AbstractWe demonstrate direct electron beam writing of a nano-scale Cu pattern on a surface with a thin aqueous layer of CuSO4 solution. Electron beams are highly maneuverable down to nano-scales. Aqueous solutions facilitate a plentiful metal ion supply for practical industrial applications, which may require continued reliable writing of sophisticated patterns. A thin aqueous layer on a surface helps to confine the writing on the surface. For this demonstration, liquid sample holder (K-kit) for transmission electron microscope (TEM) was employed to form a sealed space in a TEM. The aqueous CuSO4 solution inside the sample holder was allowed to partially dry until a uniform thin layer was left on the surface. The electron beam thus reduced Cu ions in the solution to form the desired patterns. Furthermore, the influence of e-beam exposure time and CuSO4(aq) concentration on the Cu reduction was studied in this work. Two growth stages of Cu were shown in the plot of Cu thickness versus e-beam exposure time. The measured Cu reduction rate was found to be proportional to the CuSO4(aq) concentration.

scholarly journals Direct writing of CoFe alloy nanostructures by focused electron beam induced deposition from a heteronuclear precursor

2015 ◽  
Vol 26 (47) ◽  
pp. 475701 ◽  
Author(s):  
F Porrati ◽  
M Pohlit ◽  
J Müller ◽  
S Barth ◽  
F Biegger ◽  
...  
Keyword(s):  
Electron Beam ◽  
Direct Writing ◽  
Alloy Nanostructures ◽  
Electron Beam Induced Deposition

Electron beam nano-fabrication by inorganic resist for MIM tunnel junction

1996 ◽  
Vol 30 (1-4) ◽  
pp. 411-414 ◽  
Author(s):  
M. Komuro ◽  
H. Hiroshima ◽  
S. Haraichi ◽  
K. Ishii ◽  
T. Wada ◽  
...  
Keyword(s):  
Electron Beam ◽  
Tunnel Junction ◽  
Nano Fabrication

Development of single-layer positive resist process for electron beam direct writing technology

1995 ◽  
Vol 78 (8) ◽  
pp. 81-91 ◽  
Author(s):  
Hidenori Yamaguchi ◽  
Toshio Sakamizu ◽  
Fumio Murai ◽  
Hiroshi Shiraishi ◽  
Hajime Hayakawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Layer ◽  
Direct Writing ◽  
Writing Technology ◽  
Positive Resist

Submicrometer Electron-Beam Direct Writing Technology for 1-Mbit DRAM Fabrication

1985 ◽  
Vol 20 (1) ◽  
pp. 88-93 ◽  
Author(s):  
T. Matsuda ◽  
K. Miyoshi ◽  
R. Yamaguchi ◽  
S. Moriya ◽  
T. Hosoya ◽  
...  
Keyword(s):  
Electron Beam ◽  
Direct Writing ◽  
Writing Technology

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

2021 ◽  
Vol 39 (3) ◽  
pp. 033002
Author(s):  
S. G. Walton ◽  
D. R. Boris ◽  
S. G. Rosenberg ◽  
H. Miyazoe ◽  
E. A. Joseph ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Energy ◽  
Silicon Based
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