High-rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma system

Author(s):  
Jin-Zhong Yu
1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
U. Falke

ABSTRACTFor a deeper understanding of the creation of carbon films the hydrogen-free ion assisted evaporation (IAE) method with neon species was used. Variation of the ion parameters energy and ion to neutral arrival ratio, delivering the necessary energy for modification of the film growth, results in different microstructures investigated with EELS, HRTEM and TED as well as different microhardnesses measured by dynamical Vickers indentation. A possible film growth mechanism is proposed based on an ion etching of mainly sp2-bonded carbon surface atoms and on defect dominated structure modification below the surface depending on the ion energy


2020 ◽  
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Author(s):  
Minghao Yu ◽  
Naisa Chandrasekhar ◽  
Ramya Kormath Madam Raghupathy ◽  
Khoa Hoang Ly ◽  
Haozhe Zhang ◽  
...  

2021 ◽  
Vol 39 (3) ◽  
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Author(s):  
S. G. Walton ◽  
D. R. Boris ◽  
S. G. Rosenberg ◽  
H. Miyazoe ◽  
E. A. Joseph ◽  
...  

1977 ◽  
Vol 20 (12) ◽  
pp. 2088
Author(s):  
Alexander Cavalli ◽  
John B. Greenly ◽  
J. E. Walsh

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