Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications

2005 ◽  
Vol 863 ◽  
Author(s):  
Jeannette M. Jacques ◽  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Robert Kraft
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Mechanical Strength ◽  
Crack Growth ◽  
Dielectric Films ◽  
Linear Relationships ◽  
Organosilicate Glass ◽  
Catastrophic Fracture ◽  
Electron Beam Curing ◽  
Silicon Based

AbstractFor 90 nm node devices, the group of materials known as organosilicate glass (OSG) has emerged as the predominant choice for intermetal dielectrics. A potential failure mechanism for this class of low-k dielectric films during the manufacturing process is catastrophic fracture due to channel cracking. The use of an electron beam curing process is being investigated for improvement in the mechanical strength of these silicon-based materials. Within this work, the effects of curing dose (micro-C/cm2) upon the mechanical properties of OSG thin films were characterized. For a set process voltage and current, linear relationships exist between the dose and several mechanical film properties. Channel crack growth velocities were also measured for these cured materials. As the cure dose is increased, the crack growth rate decreases according to a power law relationship. The structural film changes induced by the electron beam cure process are addressed, focusing on their impact upon the mechanical strength of OSG thin films.

Environmental Effects on Crack Characteristics for OSG Materials

2005 ◽  
Vol 875 ◽  
Author(s):  
Jeannette M. Jacques ◽  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Robert Kraft
Keyword(s):  
High Vacuum ◽  
Dielectric Films ◽  
Dependent Manner ◽  
Solution Ph ◽  
Delay Performance ◽  
Low Dielectric ◽  
Organosilicate Glass ◽  
Temperature Solution ◽  
Catastrophic Fracture ◽  
As Stress

AbstractTo improve capacitance delay performance of the advanced back-end-of-line (BEOL) structures, low dielectric constant organosilicate glass (OSG) has emerged as the predominant choice for intermetal insulator. The material has a characteristic tensile residual stress and low fracture toughness. A potential failure mechanism for this class of low-k dielectric films is catastrophic fracture due to channel cracking. During fabrication, channel cracks can also form in a time-dependent manner due to exposure to a particular environmental condition, commonly known as stress-corrosion cracking. Within this work, the environmental impacts of pressure, ambient, temperature, solution pH, and solvents upon the channel cracking of OSG thin films are characterized. Storage under high vacuum conditions and exposure to flowing dry nitrogen gas can significantly lower crack propagation rates. Cracking rates experience little fluctuation as a function of solution pH; however, exposure to aqueous solutions can increase the growth rate by three orders of magnitude.

TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 1228-1229
Author(s):  
Lew Rabenberg ◽  
J. P. Zhou ◽  
Kil-Soo Ko ◽  
Rita Johnson
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Atomic Number ◽  
Silicon Oxide ◽  
Gate Dielectrics ◽  
Dielectric Films ◽  
Amorphous Silicon Oxide ◽  
Nitride Oxide ◽  
Silicon Based

Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.

Electron beam deposited lead-lanthanum-zirconate-titanate thin films for silicon based device applications

1996 ◽  
Vol 79 (2) ◽  
pp. 1008 ◽  
Author(s):  
B. Panda ◽  
S. K. Ray ◽  
A. Dhar ◽  
A. Sarkar ◽  
D. Bhattacharya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Zirconate Titanate ◽  
Device Applications ◽  
Silicon Based

Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material

2004 ◽  
Vol 469-470 ◽  
pp. 383-387 ◽  
Author(s):  
T.C. Chang ◽  
T.M. Tsai ◽  
P.T. Liu ◽  
C.W. Chen ◽  
T.Y. Tseng
Keyword(s):  
Electron Beam ◽  
Organosilicate Glass ◽  
Electron Beam Curing ◽  
Low K

scholarly journals Evaluation of magnetic properties of thin magneto-dielectric films deposited from beam plasma in medium vacuum

2021 ◽  
Vol 2064 (1) ◽  
pp. 012073
Author(s):  
D Zolotukhin ◽  
A Tyunkov ◽  
Y Yushkov
Keyword(s):  
Thin Films ◽  
Magnetic Material ◽  
Magnetic Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Dielectric Films ◽  
Alumina Ceramics ◽  
Microstrip Resonator ◽  
Resonator Method ◽  
Medium Vacuum

Abstract By electron-beam evaporation of a solid state dielectrics (alumina ceramics) and a magnetic material (steel-3) in fore-vacuum, thin films of several μm, possessing both dielectric and magnetic properties, were deposited on a substrate. The work shows that the microstrip resonator method can be used to assess the presence of magnetic properties in films.

Environmental Effects on Subcritical Delamination of Dielectric and Metal Films from Organosilicate Glass (OSG) Thin Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Y. Lin ◽  
J.J. Vlassak ◽  
T.Y. Tsui ◽  
A.J. McKerrow
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Threshold Energy ◽  
Soda Lime ◽  
Threshold Value ◽  
Metal Films ◽  
Natural Logarithm ◽  
Aqueous Environments ◽  
Organosilicate Glass ◽  
Soda Lime Silicate Glass

AbstractSubcritical delamination of dielectric and metal films from organosilicate glass (OSG) thin films was studied in controlled ambient with different levels of relative humidity and in aqueous environments of varying pH. The material systems studied include OSG/SiO2, OSG/TaN and OSG/SiNx. For both sets of experiments, subcritical crack growth in OSG is found to be described by a model originally developed for soda-lime silicate glass. The threshold energy release rate for water molecule-assisted cracking varies linearly with the natural logarithm of water partial pressure. In aqueous environments, the threshold value decreases linearly with increasing pH in accordance with a simple model. The slope of crack growth rate curve also decreases with increasing pH.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Progressive Debonding of Multilayer Interconnect Structures

1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Driving Force ◽  
Adhesion Energy ◽  
Time Dependent ◽  
Multilayer Thin Films ◽  
Processing Conditions ◽  
Interface Morphology ◽  
Entire Sample ◽  
Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

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