Role of sidewall scattering in feature profile evolution during Cl[sub 2] and HBr plasma etching of silicon

2000 ◽  
Vol 18 (2) ◽  
pp. 820 ◽  
Author(s):  
M. A. Vyvoda ◽  
M. Li ◽  
D. B. Graves ◽  
H. Lee ◽  
M. V. Malyshev ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Hbr Plasma

The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films

1980 ◽  
Vol 19 (7) ◽  
pp. 1371-1376 ◽  
Author(s):  
Teruhiko Yamazaki ◽  
Yoshiki Suzuki ◽  
Jun Uno ◽  
Hidefumi Nakata
Keyword(s):  
Plasma Etching ◽  
Gas Plasma ◽  
Photoresist Film ◽  
Chromium Films

The role of oxygen additions in the plasma etching of silicon in tetrafluoromethane and elegas (SF6)

1983 ◽  
Vol 38 (4) ◽  
pp. 387-393
Author(s):  
A. A. Goncharenko ◽  
D. I. Slovetskii ◽  
E. F. Shelykhmanov
Keyword(s):  
Plasma Etching

Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

1993 ◽  
Vol 62 (9) ◽  
pp. 958-960 ◽  
Author(s):  
O. O. Awadelkarim ◽  
T. Gu ◽  
P. I. Mikulan ◽  
R. A. Ditizio ◽  
S. J. Fonash ◽  
...  
Keyword(s):  
Point Defects ◽  
Plasma Etching ◽  
Electronic States

Defect Penetration During the Plasma Etching of Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Rahman ◽  
M. A. Foad ◽  
S. Hicks ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Plasma Etching ◽  
Surface Defect ◽  
Source Function ◽  
Complex Form ◽  
Simple Diffusion ◽  
Channeling Effect ◽  
Observed Damage ◽  
Dry Etch

ABSTRACTDry etching can introduce defects into the material being etched. Simple expressions for both sidewall and top surface defect distributions may be obtained by assuming that the defects are introduced according to a phenomenological source function. Calculations of conductance based on these expressions are found to describe very well measurements on dry-etched wires and epilayers. Mechanisms by which defects can penetrate into the sample are discussed. The role of sample heating and defect diffusion is examined. In-situ measurements of sample temperature during a dry-etch run indicate that simple diffusion is insufficient to account entirely for the observed damage. Instead, dry-etch damage may arise from other mechanisms such as by knock-on replacement collisions, or via a channeling effect. A more complex form of diffusion may also affect the final damage distribution.

The Influence of HBr Discharge Ambience on Poly-Si/SiO2 Etching Selectivity

1991 ◽  
Vol 223 ◽  
Author(s):  
E. Ikawa ◽  
K. Tokashiki ◽  
T. Kikkawa ◽  
Y. Teraoka ◽  
I. Nishiyama
Keyword(s):  
Plasma Etching ◽  
Parallel Plate ◽  
Etch Rate ◽  
Etching Rate ◽  
Mass Analysis ◽  
Ion Etching ◽  
Loading Effect ◽  
Batch Type ◽  
Etching Selectivity ◽  
Hbr Plasma

ABSTRACTThe influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.

The role of chemisorption in plasma etching

1978 ◽  
Vol 49 (10) ◽  
pp. 5165-5170 ◽  
Author(s):  
Harold F. Winters
Keyword(s):  
Plasma Etching

Role of sulfur atoms in microwave plasma etching of silicon

1987 ◽  
Vol 62 (4) ◽  
pp. 1459-1468 ◽  
Author(s):  
Ken Ninomiya ◽  
Keizo Suzuki ◽  
Shigeru Nishimatsu ◽  
Osami Okada
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma

CCl4 and Cl2 Plasma Etching of III–V Semiconductors and the Role of Added  O 2

1982 ◽  
Vol 129 (7) ◽  
pp. 1599-1604 ◽  
Author(s):  
Randolph H. Burton ◽  
Gerald Smolinsky
Keyword(s):  
Plasma Etching

Fiber-like Structure on the Proton Exchange Membrane Created By Simultaneous Magnetron Sputtering and Plasma Etching in Role of a Catalyst Support in Water Electrolyzers

2020 ◽  
Vol MA2020-01 (37) ◽  
pp. 1586-1586
Author(s):  
Peter Kúš ◽  
Tomáš Hrbek ◽  
Yurii Yakovlev ◽  
Jaroslava Novakova ◽  
Vladimír Matolin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Plasma Etching ◽  
Proton Exchange Membrane ◽  
Catalyst Support ◽  
Proton Exchange ◽  
Exchange Membrane
Sign in / Sign up

Export Citation Format

Share Document