The role of oxygen additions in the plasma etching of silicon in tetrafluoromethane and elegas (SF6)

1983 ◽  
Vol 38 (4) ◽  
pp. 387-393
Author(s):  
A. A. Goncharenko ◽  
D. I. Slovetskii ◽  
E. F. Shelykhmanov
Keyword(s):  
Plasma Etching

The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films

1980 ◽  
Vol 19 (7) ◽  
pp. 1371-1376 ◽  
Author(s):  
Teruhiko Yamazaki ◽  
Yoshiki Suzuki ◽  
Jun Uno ◽  
Hidefumi Nakata
Keyword(s):  
Plasma Etching ◽  
Gas Plasma ◽  
Photoresist Film ◽  
Chromium Films

Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

1993 ◽  
Vol 62 (9) ◽  
pp. 958-960 ◽  
Author(s):  
O. O. Awadelkarim ◽  
T. Gu ◽  
P. I. Mikulan ◽  
R. A. Ditizio ◽  
S. J. Fonash ◽  
...  
Keyword(s):  
Point Defects ◽  
Plasma Etching ◽  
Electronic States

Defect Penetration During the Plasma Etching of Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Rahman ◽  
M. A. Foad ◽  
S. Hicks ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Plasma Etching ◽  
Surface Defect ◽  
Source Function ◽  
Complex Form ◽  
Simple Diffusion ◽  
Channeling Effect ◽  
Observed Damage ◽  
Dry Etch

ABSTRACTDry etching can introduce defects into the material being etched. Simple expressions for both sidewall and top surface defect distributions may be obtained by assuming that the defects are introduced according to a phenomenological source function. Calculations of conductance based on these expressions are found to describe very well measurements on dry-etched wires and epilayers. Mechanisms by which defects can penetrate into the sample are discussed. The role of sample heating and defect diffusion is examined. In-situ measurements of sample temperature during a dry-etch run indicate that simple diffusion is insufficient to account entirely for the observed damage. Instead, dry-etch damage may arise from other mechanisms such as by knock-on replacement collisions, or via a channeling effect. A more complex form of diffusion may also affect the final damage distribution.

The role of chemisorption in plasma etching

1978 ◽  
Vol 49 (10) ◽  
pp. 5165-5170 ◽  
Author(s):  
Harold F. Winters
Keyword(s):  
Plasma Etching

Role of sulfur atoms in microwave plasma etching of silicon

1987 ◽  
Vol 62 (4) ◽  
pp. 1459-1468 ◽  
Author(s):  
Ken Ninomiya ◽  
Keizo Suzuki ◽  
Shigeru Nishimatsu ◽  
Osami Okada
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma

Role of sidewall scattering in feature profile evolution during Cl[sub 2] and HBr plasma etching of silicon

2000 ◽  
Vol 18 (2) ◽  
pp. 820 ◽  
Author(s):  
M. A. Vyvoda ◽  
M. Li ◽  
D. B. Graves ◽  
H. Lee ◽  
M. V. Malyshev ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Hbr Plasma

CCl4 and Cl2 Plasma Etching of III–V Semiconductors and the Role of Added  O 2

1982 ◽  
Vol 129 (7) ◽  
pp. 1599-1604 ◽  
Author(s):  
Randolph H. Burton ◽  
Gerald Smolinsky
Keyword(s):  
Plasma Etching

Fiber-like Structure on the Proton Exchange Membrane Created By Simultaneous Magnetron Sputtering and Plasma Etching in Role of a Catalyst Support in Water Electrolyzers

2020 ◽  
Vol MA2020-01 (37) ◽  
pp. 1586-1586
Author(s):  
Peter Kúš ◽  
Tomáš Hrbek ◽  
Yurii Yakovlev ◽  
Jaroslava Novakova ◽  
Vladimír Matolin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Plasma Etching ◽  
Proton Exchange Membrane ◽  
Catalyst Support ◽  
Proton Exchange ◽  
Exchange Membrane

Maskless Plasma Etching of Diamond Cones:  The Role of CH4Gas and Enhanced Field Emission Property

2007 ◽  
Vol 111 (19) ◽  
pp. 7058-7062 ◽  
Author(s):  
Q. Wang ◽  
J. J. Li ◽  
Y. L. Li ◽  
Z. L. Wang ◽  
C. Z. Gu ◽  
...  
Keyword(s):  
Field Emission ◽  
Plasma Etching ◽  
Emission Property ◽  
Field Emission Property
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