Role of sulfur atoms in microwave plasma etching of silicon

1987 ◽  
Vol 62 (4) ◽  
pp. 1459-1468 ◽  
Author(s):  
Ken Ninomiya ◽  
Keizo Suzuki ◽  
Shigeru Nishimatsu ◽  
Osami Okada
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma

The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films

1980 ◽  
Vol 19 (7) ◽  
pp. 1371-1376 ◽  
Author(s):  
Teruhiko Yamazaki ◽  
Yoshiki Suzuki ◽  
Jun Uno ◽  
Hidefumi Nakata
Keyword(s):  
Plasma Etching ◽  
Gas Plasma ◽  
Photoresist Film ◽  
Chromium Films

The role of oxygen additions in the plasma etching of silicon in tetrafluoromethane and elegas (SF6)

1983 ◽  
Vol 38 (4) ◽  
pp. 387-393
Author(s):  
A. A. Goncharenko ◽  
D. I. Slovetskii ◽  
E. F. Shelykhmanov
Keyword(s):  
Plasma Etching

The Control Of Intrinsic Stresses In Cvd Diamond Films With Multistep Processing

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Nijhawan ◽  
S. M. Jankovsky ◽  
B. W. Sheldon
Keyword(s):  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Internal Stresses ◽  
Tensile Stresses ◽  
Si Substrates

ABSTRACTThe role of intrinsic stresses in diamond films is examined. The films were deposited on (100) Si substrates by microwave plasma-enhanced chemical vapor deposition. The total internal stresses (thermal and intrinsic) were measured at room temperature with the bending plate method. The thermal stresses are compressive and arise due to the mismatch in thermal expansion coefficient of film and substrate. The intinsic stresses were tensile and evolved during the deposition process. These stresses increased with increasing deposition time. A 12 hour intermediate annealing treatment was found to reduce the tensile stresses considerably. The annealing treatment is most effective when the diamond crystallites are undergoing impingement and coalescence. This is consistent with the theory that the maximum tensile stresses are associated with grain boundary energetics.

Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

1993 ◽  
Vol 62 (9) ◽  
pp. 958-960 ◽  
Author(s):  
O. O. Awadelkarim ◽  
T. Gu ◽  
P. I. Mikulan ◽  
R. A. Ditizio ◽  
S. J. Fonash ◽  
...  
Keyword(s):  
Point Defects ◽  
Plasma Etching ◽  
Electronic States

Defect Penetration During the Plasma Etching of Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Rahman ◽  
M. A. Foad ◽  
S. Hicks ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Plasma Etching ◽  
Surface Defect ◽  
Source Function ◽  
Complex Form ◽  
Simple Diffusion ◽  
Channeling Effect ◽  
Observed Damage ◽  
Dry Etch

ABSTRACTDry etching can introduce defects into the material being etched. Simple expressions for both sidewall and top surface defect distributions may be obtained by assuming that the defects are introduced according to a phenomenological source function. Calculations of conductance based on these expressions are found to describe very well measurements on dry-etched wires and epilayers. Mechanisms by which defects can penetrate into the sample are discussed. The role of sample heating and defect diffusion is examined. In-situ measurements of sample temperature during a dry-etch run indicate that simple diffusion is insufficient to account entirely for the observed damage. Instead, dry-etch damage may arise from other mechanisms such as by knock-on replacement collisions, or via a channeling effect. A more complex form of diffusion may also affect the final damage distribution.

Mechanism of microwave plasma etching of polyimides in O2 and CF4 gas mixtures

1986 ◽  
Vol 5 (1-4) ◽  
pp. 375-386 ◽  
Author(s):  
N.J. Chou ◽  
J. Parazsczak ◽  
E. Babich ◽  
Y.S. Chaug ◽  
R. Goldblatt
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma ◽  
Gas Mixtures

Ion energy and anisotropy in microwave plasma etching of polymers

1986 ◽  
Vol 5 (1-4) ◽  
pp. 363-374 ◽  
Author(s):  
J.E. Heidenreich ◽  
J.R. Paraszczak ◽  
M. Moisan ◽  
G. Sauve
Keyword(s):  
Plasma Etching ◽  
Microwave Plasma ◽  
Ion Energy

Role of microstructure on the oxidation behavior of microwave plasma synthesized diamond and diamond-like carbon films

1990 ◽  
Vol 5 (11) ◽  
pp. 2445-2450 ◽  
Author(s):  
Rao R. Nimmagadda ◽  
A. Joshi ◽  
W. L. Hsu
Keyword(s):  
Oxidation Behavior ◽  
Microwave Plasma ◽  
Natural Diamond ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gravimetric Analysis ◽  
Oxidation Rates

Oxidation kinetics of microwave plasma assisted CVD diamond and diamond-like carbon (DLC) films in flowing oxygen were evaluated in the temperature range of 500 to 750 °C and were compared with those of graphite and natural diamond. The diamond and DLC films were prepared using CH4/H2 ratios of 0.1, 0.25, 0.5, 1.0, and 2.0%. The films deposited at 0.1% ratio had a faceted crystalline structure with high sp3 content and as the ratio increased toward 2%, the films contained more and more fine crystalline sp2 bonded carbon. The oxidation rates were determined by thermal gravimetric analysis (TGA), which shows that the films deposited at ratios of 2, 1, and 0.5% oxidized at high rates and lie between the rates of natural diamond and graphite. The oxidation rate decreased with lower CH4/H2 ratio and the films deposited at 0.25 and 0.1% exhibited the lowest oxidation rates associated with the highest activation energies in the range of 293–285 kJ/mol · K. The oxidation behavior of microwave plasma assisted diamond films was similar to that of DC plasma assisted CVD diamond films. The results suggest that the same mechanism of oxidation is operational in both DC and microwave plasma assisted diamond films and is probably related to the microstructure and preferred orientation of the crystallites.

Sign in / Sign up

Export Citation Format

Share Document