Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen
1980 ◽
Vol 19
(7)
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pp. 1371-1376
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2008 ◽
Vol 128
(14)
◽
pp. 144310
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1981 ◽
Vol 1
(1)
◽
pp. 37-52
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2001 ◽
Vol 353-356
◽
pp. 323-326
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