Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidants

1981 ◽  
Vol 1 (1) ◽  
pp. 37-52 ◽  
Author(s):  
Daniel L. Flamm
Keyword(s):  
Plasma Etching ◽  
Radical Production

The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films

1980 ◽  
Vol 19 (7) ◽  
pp. 1371-1376 ◽  
Author(s):  
Teruhiko Yamazaki ◽  
Yoshiki Suzuki ◽  
Jun Uno ◽  
Hidefumi Nakata
Keyword(s):  
Plasma Etching ◽  
Gas Plasma ◽  
Photoresist Film ◽  
Chromium Films

The role of oxygen additions in the plasma etching of silicon in tetrafluoromethane and elegas (SF6)

1983 ◽  
Vol 38 (4) ◽  
pp. 387-393
Author(s):  
A. A. Goncharenko ◽  
D. I. Slovetskii ◽  
E. F. Shelykhmanov
Keyword(s):  
Plasma Etching

Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

1993 ◽  
Vol 62 (9) ◽  
pp. 958-960 ◽  
Author(s):  
O. O. Awadelkarim ◽  
T. Gu ◽  
P. I. Mikulan ◽  
R. A. Ditizio ◽  
S. J. Fonash ◽  
...  
Keyword(s):  
Point Defects ◽  
Plasma Etching ◽  
Electronic States

Defect Penetration During the Plasma Etching of Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Rahman ◽  
M. A. Foad ◽  
S. Hicks ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Plasma Etching ◽  
Surface Defect ◽  
Source Function ◽  
Complex Form ◽  
Simple Diffusion ◽  
Channeling Effect ◽  
Observed Damage ◽  
Dry Etch

ABSTRACTDry etching can introduce defects into the material being etched. Simple expressions for both sidewall and top surface defect distributions may be obtained by assuming that the defects are introduced according to a phenomenological source function. Calculations of conductance based on these expressions are found to describe very well measurements on dry-etched wires and epilayers. Mechanisms by which defects can penetrate into the sample are discussed. The role of sample heating and defect diffusion is examined. In-situ measurements of sample temperature during a dry-etch run indicate that simple diffusion is insufficient to account entirely for the observed damage. Instead, dry-etch damage may arise from other mechanisms such as by knock-on replacement collisions, or via a channeling effect. A more complex form of diffusion may also affect the final damage distribution.

scholarly journals Imidazole metalloporphyrins as photosensitizers for photodynamic therapy: Role of molecular charge, central metal and hydroxyl radical production

2009 ◽  
Vol 282 (1) ◽  
pp. 63-76 ◽  
Author(s):  
Pawel Mroz ◽  
Jayeeta Bhaumik ◽  
Dilek K. Dogutan ◽  
Zarmeneh Aly ◽  
Zahra Kamal ◽  
...  
Keyword(s):  
Photodynamic Therapy ◽  
Hydroxyl Radical ◽  
Central Metal ◽  
Radical Production ◽  
Molecular Charge

Role of cytokines to radical production of neutrophils in patients with Behcet's disease

1991 ◽  
Vol 13 (6) ◽  
pp. 749
Author(s):  
M. Nishikawa ◽  
T. Sakane ◽  
M. Kogure ◽  
T. Sato ◽  
C. Higuchi ◽  
...  
Keyword(s):  
Behçet’S Disease ◽  
Behcet’S Disease ◽  
Behçet's Disease ◽  
Behcet's Disease ◽  
Radical Production

Acute toxic effects of trinitrotoluene on rat brain, liver and kidney: role of radical production

1982 ◽  
Vol 51 (1) ◽  
pp. 53-64 ◽  
Author(s):  
Antti Zitting ◽  
Grażyna Szumańska ◽  
Juha Nickels ◽  
Heikki Savolainen
Keyword(s):  
Rat Brain ◽  
Toxic Effects ◽  
Radical Production ◽  
Liver And Kidney ◽  
Acute Toxic
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