Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

H. Lafontaine

doi:10.1116/1.589209

Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589209 ◽

1996 ◽

Vol 14 (3) ◽

pp. 1675 ◽

Cited By ~ 32

Author(s):

H. Lafontaine

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Chemical Vapor Deposition Reactor

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In situRaman characterization of a diamond film during its growth process in a plasma jet chemical vapor deposition reactor

Journal of Applied Physics ◽

10.1063/1.360636 ◽

1995 ◽

Vol 78 (1) ◽

pp. 519-527 ◽

Cited By ~ 12

Author(s):

N. Rosman ◽

L. Abello ◽

J. P. Chabert ◽

G. Verven ◽

G. Lucazeau

Keyword(s):

Chemical Vapor Deposition ◽

Diamond Film ◽

Vapor Deposition ◽

Growth Process ◽

Chemical Vapor ◽

Plasma Jet ◽

Chemical Vapor Deposition Reactor

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Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1787 ◽

1994 ◽

Vol 33 (Part 1, No. 4A) ◽

pp. 1787-1792 ◽

Cited By ~ 4

Author(s):

Ting-Chang Chang ◽

Chun-Yen Chang ◽

Tz-Guei Jung ◽

Wen-Chung Tsai ◽

Guo-Wei Huang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Deposition Technique ◽

Strained Layer ◽

Chemical Vapor Deposition Technique ◽

Vapor Deposition Technique ◽

Strained Layer Superlattices

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Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.357206 ◽

1994 ◽

Vol 76 (8) ◽

pp. 4921-4923 ◽

Cited By ~ 3

Author(s):

T. G. Jung ◽

C. Y. Chang ◽

C. S. Liu ◽

T. C. Chang ◽

H. C. Lin ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Heterojunction Diode

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Low thermal budget in situ removal of oxygen and carbon on silicon for silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

Applied Physics Letters ◽

10.1063/1.113254 ◽

1995 ◽

Vol 66 (10) ◽

pp. 1255-1257 ◽

Cited By ~ 12

Author(s):

Mahesh K. Sanganeria ◽

Mehmet C. Öztürk ◽

Katherine E. Violette ◽

Gari Harris ◽

C. Archie Lee ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Thermal Budget ◽

Chemical Vapor Deposition Reactor ◽

Thermal Chemical Vapor Deposition ◽

Silicon Epitaxy ◽

Low Thermal Budget

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Low temperature silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor using disilane

Applied Physics Letters ◽

10.1063/1.109779 ◽

1993 ◽

Vol 63 (9) ◽

pp. 1225-1227 ◽

Cited By ~ 15

Author(s):

Mahesh K. Sanganeria ◽

Katherine E. Violette ◽

Mehmet C. Öztürk

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Chemical Vapor Deposition Reactor ◽

Thermal Chemical Vapor Deposition ◽

Silicon Epitaxy

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Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4278 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4278-4282 ◽

Cited By ~ 6

Author(s):

Hsiao-Yi Lin ◽

Chun-Yen Chang ◽

Tan Fu Lei ◽

Juing-Yi Cheng ◽

Hua-Chou Tseng ◽

...

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Mechanical Polishing ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Silicon Thin Film

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Characterization of fluorinated tetra ethyl ortho silicate oxide films deposited in a low pressure plasma enhanced chemical vapor deposition reactor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580549 ◽

1997 ◽

Vol 15 (3) ◽

pp. 1399-1402 ◽

Cited By ~ 10

Author(s):

M. T. Weise ◽

S. C. Selbrede ◽

L. J. Arias ◽

D. Carl

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposition Reactor ◽

Pressure Plasma ◽

Low Pressure Plasma ◽

Tetra Ethyl Ortho Silicate

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Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1464840 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1120-1124 ◽

Cited By ~ 12

Author(s):

S. R. Sheng ◽

M. Dion ◽

S. P. McAlister ◽

N. L. Rowell

Keyword(s):

Chemical Vapor Deposition ◽

Single Crystal ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Epitaxial Layers ◽

Bulk Single Crystal ◽

Si Substrates

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In Situ Phosphorus Doping during Silicon Epitaxy in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Journal of The Electrochemical Society ◽

10.1149/1.1392631 ◽

1999 ◽

Vol 146 (11) ◽

pp. 4303-4308 ◽

Cited By ~ 5

Author(s):

Ibrahim Ban ◽

M. C. Öztürk

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Phosphorus Doping ◽

Chemical Vapor Deposition Reactor ◽

Thermal Chemical Vapor Deposition ◽

Silicon Epitaxy

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Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor

Journal of The Electrochemical Society ◽

10.1149/1.2059317 ◽

1994 ◽

Vol 141 (11) ◽

pp. 3269-3273 ◽

Cited By ~ 26

Author(s):

Katherine E. Violette ◽

Mahesh K. Sanganeria ◽

Mehmet C. Öztürk ◽

Gari Harris ◽

Dennis M. Maher

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Growth Kinetics ◽

Vapor Deposition ◽

Ultrahigh Vacuum ◽

Chemical Vapor ◽

Selective Epitaxy ◽

Chemical Vapor Deposition Reactor ◽

Thermal Chemical Vapor Deposition

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