Semiconductor on glass photocathodes as high-performance sources for parallel electron beam lithography

1996 ◽  
Vol 14 (6) ◽  
pp. 3782 ◽  
Author(s):  
J. E. Schneider
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance

Submicron Pseudomorphic Hemt’S Using Non-Alloyed Ohmic Contacts with Contrast Enhancement.

1990 ◽  
Vol 181 ◽  
Author(s):  
Ph. Jansen ◽  
W. De Raedt ◽  
M. Van Hove ◽  
R. Jonckheere ◽  
R. Pereira ◽  
...  
Keyword(s):  
Electron Beam ◽  
Contact Resistance ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Ohmic Contacts ◽  
Sintering Temperature ◽  
Enhancement Mode ◽  
First Time ◽  
Lower Contact ◽  
Very High

ABSTRACTWe report for the first time the realization of submicron pseudomorphic Al.15, Ga.85As-In.20Ga.80As HEMT’s with non-alloyed Pd/Ge ohmic coi tacts. Best results of contact resistance were obtained at a sintering temperature of 340°C with values as low as 0.057 Ωmm. Enhanced contrast, needed for accurate alignment of the gate by electron-beam lithography, was obtained by using Pd/Ge/Ti/Pd and Pd/Ge/Ti/Pt metal sequences. These contacts exhibited even lower contact resistances than the standard Pd/Ge contacts. Although Pd/Ge/Ti/Pd exhibits good morphology, reaction is witnessed at the edges, reducing the accuracy of alignment.Processed enhancement mode devices exhibit maximum transconductances in excess of 520 mS/mm and currents of 300 mA/mm for 0.3 micron gatelength. This study shows that the contact resistance is no longer a restriction for obtaining very high transconductances in high performance devices.

Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography

1996 ◽  
Vol 35 (Part 1, No. 12B) ◽  
pp. 6506-6510 ◽  
Author(s):  
Tetsuro Nakasugi ◽  
Hitoshi Tamura ◽  
Hiromi Niiyama ◽  
Satoshi Saito ◽  
Naoko Kihara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Chemically Amplified ◽  
Positive Resist

High performance Si immersion gratings patterned with electron beam lithography

2014 ◽  
Author(s):  
Michael A. Gully-Santiago ◽  
Daniel T. Jaffe ◽  
Cynthia B. Brooks ◽  
Daniel W. Wilson ◽  
Richard E. Muller
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance

scholarly journals Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

2021 ◽  
pp. 2000978
Author(s):  
Nikhil Tiwale ◽  
Satyaprasad P. Senanayak ◽  
Juan Rubio‐Lara ◽  
Abhinav Prasad ◽  
Atif Aziz ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Direct Write ◽  
Top Down ◽  
Solution Processed

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction
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