High-performance electron beam lithography for 0.5 μm semiconductor device fabrication

1989 ◽  
Vol 7 (6) ◽  
pp. 1528
Author(s):  
T. Sakashita
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Semiconductor Device ◽  
Device Fabrication

Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 6788-6791 ◽  
Author(s):  
Kenji Yamazaki ◽  
Akira Fujiwara ◽  
Yasuo Takahashi ◽  
Hideo Namatsu ◽  
Kenji Kurihara
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Device Fabrication ◽  
Nanometer Scale

Submicron Pseudomorphic Hemt’S Using Non-Alloyed Ohmic Contacts with Contrast Enhancement.

1990 ◽  
Vol 181 ◽  
Author(s):  
Ph. Jansen ◽  
W. De Raedt ◽  
M. Van Hove ◽  
R. Jonckheere ◽  
R. Pereira ◽  
...  
Keyword(s):  
Electron Beam ◽  
Contact Resistance ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Ohmic Contacts ◽  
Sintering Temperature ◽  
Enhancement Mode ◽  
First Time ◽  
Lower Contact ◽  
Very High

ABSTRACTWe report for the first time the realization of submicron pseudomorphic Al.15, Ga.85As-In.20Ga.80As HEMT’s with non-alloyed Pd/Ge ohmic coi tacts. Best results of contact resistance were obtained at a sintering temperature of 340°C with values as low as 0.057 Ωmm. Enhanced contrast, needed for accurate alignment of the gate by electron-beam lithography, was obtained by using Pd/Ge/Ti/Pd and Pd/Ge/Ti/Pt metal sequences. These contacts exhibited even lower contact resistances than the standard Pd/Ge contacts. Although Pd/Ge/Ti/Pd exhibits good morphology, reaction is witnessed at the edges, reducing the accuracy of alignment.Processed enhancement mode devices exhibit maximum transconductances in excess of 520 mS/mm and currents of 300 mA/mm for 0.3 micron gatelength. This study shows that the contact resistance is no longer a restriction for obtaining very high transconductances in high performance devices.

Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography

1996 ◽  
Vol 35 (Part 1, No. 12B) ◽  
pp. 6506-6510 ◽  
Author(s):  
Tetsuro Nakasugi ◽  
Hitoshi Tamura ◽  
Hiromi Niiyama ◽  
Satoshi Saito ◽  
Naoko Kihara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Chemically Amplified ◽  
Positive Resist
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