scholarly journals Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route

2021 ◽  
pp. 2000978
Author(s):  
Nikhil Tiwale ◽  
Satyaprasad P. Senanayak ◽  
Juan Rubio‐Lara ◽  
Abhinav Prasad ◽  
Atif Aziz ◽  
...  
1992 ◽  
Vol 19 (1-4) ◽  
pp. 737-740
Author(s):  
M.N. Webster ◽  
A.H. Verbruggen ◽  
J. Romijn ◽  
H.F.F. Jos ◽  
P.M.A. Moors ◽  
...  

1996 ◽  
Vol 9 (4) ◽  
pp. 663-675 ◽  
Author(s):  
Anthony E. Novembre ◽  
Regine G. Tarascon ◽  
Steven D. Berger ◽  
Chris J. Biddick ◽  
Myrtle I. Blakey ◽  
...  

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.


2012 ◽  
Vol 3 ◽  
pp. 773-777 ◽  
Author(s):  
Fabian Enderle ◽  
Oliver Dubbers ◽  
Alfred Plettl ◽  
Paul Ziemann

For many applications it is desirable to have nanoparticles positioned on top of a given substrate well separated from each other and arranged in arrays of a certain geometry. For this purpose, a method is introduced combining the bottom-up self-organization of precursor-loaded micelles providing Au nanoparticles (NPs), with top-down electron-beam lithography. As an example, 13 nm Au NPs are arranged in a square array with interparticle distances >1 µm on top of Si substrates. By using these NPs as masks for a subsequent reactive ion etching, the square pattern is transferred into Si as a corresponding array of nanopillars.


2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4122-4126
Author(s):  
Eric Lavallée ◽  
Jacques Beauvais ◽  
Dominique Drouin ◽  
Mélanie Cloutier ◽  
Pan Yang ◽  
...  

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