Evaluation and application of a very high performance chemically amplified resist for electron-beam lithography

1993 ◽  
Vol 11 (6) ◽  
pp. 2807 ◽  
Author(s):  
K. Y. Lee
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Very High

Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

1997 ◽  
Author(s):  
Zheng Cui ◽  
R. A. Moody ◽  
Ian M. Loader ◽  
John G. Watson ◽  
Philip D. Prewett
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4157-4162 ◽  
Author(s):  
Tetsuro Nakasugi ◽  
Atsushi Ando ◽  
Ryoichi Inanami ◽  
Noriaki Sasaki ◽  
Kazuyoshi Sugihara ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Energy ◽  
Energy Electron ◽  
Chemically Amplified ◽  
Edge Roughness ◽  
Chemically Amplified Resist ◽  
Low Energy Electron

Dynamics of Radical Cation of Poly(styrene acrylate)-Based Chemically Amplified Resist for Extreme Ultraviolet and Electron Beam Lithography

2011 ◽  
Vol 50 (6S) ◽  
pp. 06GD03 ◽  
Author(s):  
Yasuharu Tajima ◽  
Kazumasa Okamoto ◽  
Takahiro Kozawa ◽  
Seiichi Tagawa ◽  
Ryoko Fujiyoshi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Radical Cation ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

New positive-acting chemically amplified resist system for electron-beam lithography

1992 ◽  
Author(s):  
Hiroo Koyanagi ◽  
Shin'ichi Umeda ◽  
Seiki Fukunaga ◽  
Tomoyuki Kitaori ◽  
Kohtaro Nagasawa
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Submicron Pseudomorphic Hemt’S Using Non-Alloyed Ohmic Contacts with Contrast Enhancement.

1990 ◽  
Vol 181 ◽  
Author(s):  
Ph. Jansen ◽  
W. De Raedt ◽  
M. Van Hove ◽  
R. Jonckheere ◽  
R. Pereira ◽  
...  
Keyword(s):  
Electron Beam ◽  
Contact Resistance ◽  
Electron Beam Lithography ◽  
High Performance ◽  
Ohmic Contacts ◽  
Sintering Temperature ◽  
Enhancement Mode ◽  
First Time ◽  
Lower Contact ◽  
Very High

ABSTRACTWe report for the first time the realization of submicron pseudomorphic Al.15, Ga.85As-In.20Ga.80As HEMT’s with non-alloyed Pd/Ge ohmic coi tacts. Best results of contact resistance were obtained at a sintering temperature of 340°C with values as low as 0.057 Ωmm. Enhanced contrast, needed for accurate alignment of the gate by electron-beam lithography, was obtained by using Pd/Ge/Ti/Pd and Pd/Ge/Ti/Pt metal sequences. These contacts exhibited even lower contact resistances than the standard Pd/Ge contacts. Although Pd/Ge/Ti/Pd exhibits good morphology, reaction is witnessed at the edges, reducing the accuracy of alignment.Processed enhancement mode devices exhibit maximum transconductances in excess of 520 mS/mm and currents of 300 mA/mm for 0.3 micron gatelength. This study shows that the contact resistance is no longer a restriction for obtaining very high transconductances in high performance devices.

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