First-wafer effect in remote plasma processing: The stripping of photoresist, silicon nitride, and polysilicon

1994 ◽  
Vol 12 (4) ◽  
pp. 2810 ◽  
Author(s):  
Lee M. Loewenstein
Keyword(s):  
Silicon Nitride ◽  
Plasma Processing ◽  
Remote Plasma

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

1999 ◽  
Vol 592 ◽  
Author(s):  
Gerry Lucovsky ◽  
Yider Wu ◽  
Yi-Mu Lee ◽  
Hanyang Yang ◽  
Hiro Niimi
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
Plasma Processing ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Remote Plasma ◽  
Thermally Grown Oxides ◽  
Interfacial Layers ◽  
Direct Tunneling

ABSTRACTDirect tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

H2 and N2 Remote Plasma Processing of Wurtzite-Like Oxides: Implications for Energy Applications

2015 ◽  
Vol 13 (1) ◽  
pp. 147-160 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Giuseppe V. Bianco ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Maria Losurdo
Keyword(s):  
Plasma Processing ◽  
Remote Plasma ◽  
Energy Applications

Ultrathin silicon oxynitride films grown by Ar/N2O remote plasma processing

1998 ◽  
Vol 83 (12) ◽  
pp. 7635-7639 ◽  
Author(s):  
Bradley C. Smith ◽  
H. Henry Lamb
Keyword(s):  
Plasma Processing ◽  
Silicon Oxynitride ◽  
Remote Plasma

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Silicon nitride film growth by remote plasma CVD using Tris(dimethylamino)silane

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 747-750 ◽  
Author(s):  
Toru Aoki ◽  
Takuya Ogishima ◽  
Aleksander M Wróbel ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Silicon Nitride ◽  
Film Growth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Remote Plasma

Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

1985 ◽  
Vol 3 (3) ◽  
pp. 867-872 ◽  
Author(s):  
P. D. Richard ◽  
R. J. Markunas ◽  
G. Lucovsky ◽  
G. G. Fountain ◽  
A. N. Mansour ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Remote Plasma ◽  
Gate Insulators ◽  
Plasma Enhanced Cvd
Sign in / Sign up

Export Citation Format

Share Document