Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

1993 ◽  
Vol 11 (3) ◽  
pp. 1056 ◽  
Author(s):  
Werner Wegscheider
Keyword(s):  
Misfit Dislocation ◽  
Tensile Strain ◽  
Epitaxial Layers

scholarly journals Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers

1996 ◽  
Vol 89 (3) ◽  
pp. 341-346 ◽  
Author(s):  
W. Wierzchowski ◽  
K. Mazur ◽  
Wł. Strupiński ◽  
K. Wieteska ◽  
W. Graeff
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Dislocation Sources

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

1993 ◽  
Vol 74 (5) ◽  
pp. 3103-3110 ◽  
Author(s):  
G. Patrick Watson ◽  
Dieter G. Ast ◽  
Timothy J. Anderson ◽  
Balu Pathangey
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Patterned Substrates ◽  
Dislocation Glide

A Multiplication Mechanism for Misfit Dislocations

1992 ◽  
Vol 263 ◽  
Author(s):  
Michael A. Capano
Keyword(s):  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Sequential Process ◽  
Single Dislocation ◽  
Dislocation Arrays ◽  
Half Loop ◽  
Dislocation Sources

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

Boron Precipitation and misfit dislocation structure in Si(Ge,B) buried epitaxial layers

1988 ◽  
Vol 46 ◽  
pp. 492-493
Author(s):  
R.R. Kola ◽  
J.B. Posthill ◽  
G.A. Rozgonyi
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Chemical System ◽  
Epitaxial Layers ◽  
Lattice Contraction ◽  
Co Doping ◽  
Buried Layers ◽  
P Type

Heavily boron-doped silicon buried epitaxial layers are becoming increasingly important in the fabrication of thin membranes, three dimensional structures in silicon and latch-up free CMOS circuits. Si(Ge,B) co-doping has been utilized to compensate the B-induced lattice contraction in Si and hence buried high conducting layers which are strain-free and lattice matched to the Si substrate have been realized. The utilization of isoelectronic Ge also alters the point defect distribution in silicon resulting in reduced dopant diffusion which is an added advantage in realizing shallow junctions and reduced interfacial transition width in epitaxial layers. This contribution addresses the evolution of misfit dislocation structure and B precipitation behavior in heavily B-doped buried Si epitaxial layers. In addition, the effect of Ge co-doping on B solubility in Si will be discussed.Silicon epitaxial layers were grown at 1080°C by chemical vapor deposition on 4-inch diameter p-type (100) substrates (10 and 0.04 Ω-cm) employing the SiH2Cl2-B2H6-GeH4-H2 chemical system. Single 5 μm thick epilayers and 2 μm buried layers with 4 μm intrinsic cap layers (10 Ω-cm) were grown.

Influence of Interfacial Oxygen and Carbon on Misfit Dislocation Generation in SiGe Epitaxial Layers

2019 ◽  
Vol 19 (1) ◽  
pp. 213-221
Author(s):  
Masahiro Fukuda ◽  
Yosuke Shimamune ◽  
Katsuto Tanahashi ◽  
Keiji Ikeda ◽  
Masatoshi Nishikawa ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Dislocation Generation ◽  
Interfacial Oxygen
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