Influence of Interfacial Oxygen and Carbon on Misfit Dislocation Generation in SiGe Epitaxial Layers

2019 ◽  
Vol 19 (1) ◽  
pp. 213-221
Author(s):  
Masahiro Fukuda ◽  
Yosuke Shimamune ◽  
Katsuto Tanahashi ◽  
Keiji Ikeda ◽  
Masatoshi Nishikawa ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Dislocation Generation ◽  
Interfacial Oxygen

Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

2001 ◽  
Vol 673 ◽  
Author(s):  
A. Maxwell Andrews ◽  
J.S. Speck ◽  
A.E. Romanov ◽  
M. Bobeth ◽  
W. Pompe
Keyword(s):  
Misfit Dislocation ◽  
Film Growth ◽  
Strain Relaxation ◽  
Dislocation Generation ◽  
Force Microscopy ◽  
Step Flow ◽  
Atomic Force ◽  
Subsequent Step ◽  
Step Flow Growth ◽  
Lateral Scale

ABSTRACTAn approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

scholarly journals Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers

1996 ◽  
Vol 89 (3) ◽  
pp. 341-346 ◽  
Author(s):  
W. Wierzchowski ◽  
K. Mazur ◽  
Wł. Strupiński ◽  
K. Wieteska ◽  
W. Graeff
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Dislocation Sources

Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

1990 ◽  
Vol 198 ◽  
Author(s):  
D.C. Houghton ◽  
N.L. Rowell
Keyword(s):  
Quantum Wells ◽  
Misfit Dislocation ◽  
Thermal Processing ◽  
Internal Quantum Efficiency ◽  
Dislocation Nucleation ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Dislocation Generation ◽  
Strained Layers ◽  
Wide Range

ABSTRACTThe thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

1993 ◽  
Vol 74 (5) ◽  
pp. 3103-3110 ◽  
Author(s):  
G. Patrick Watson ◽  
Dieter G. Ast ◽  
Timothy J. Anderson ◽  
Balu Pathangey
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Patterned Substrates ◽  
Dislocation Glide

A Multiplication Mechanism for Misfit Dislocations

1992 ◽  
Vol 263 ◽  
Author(s):  
Michael A. Capano
Keyword(s):  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Sequential Process ◽  
Single Dislocation ◽  
Dislocation Arrays ◽  
Half Loop ◽  
Dislocation Sources

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

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