The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

1993 ◽  
Vol 74 (5) ◽  
pp. 3103-3110 ◽  
Author(s):  
G. Patrick Watson ◽  
Dieter G. Ast ◽  
Timothy J. Anderson ◽  
Balu Pathangey
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Patterned Substrates ◽  
Dislocation Glide

scholarly journals Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers

1996 ◽  
Vol 89 (3) ◽  
pp. 341-346 ◽  
Author(s):  
W. Wierzchowski ◽  
K. Mazur ◽  
Wł. Strupiński ◽  
K. Wieteska ◽  
W. Graeff
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Dislocation Sources

A Multiplication Mechanism for Misfit Dislocations

1992 ◽  
Vol 263 ◽  
Author(s):  
Michael A. Capano
Keyword(s):  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Sequential Process ◽  
Single Dislocation ◽  
Dislocation Arrays ◽  
Half Loop ◽  
Dislocation Sources

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP

2012 ◽  
Vol 112 (2) ◽  
pp. 023520 ◽  
Author(s):  
R. M. France ◽  
W. E. McMahon ◽  
A. G. Norman ◽  
J. F. Geisz ◽  
M. J. Romero
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Glide ◽  
Plane Distribution

Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy

2011 ◽  
Vol 99 (8) ◽  
pp. 081912 ◽  
Author(s):  
Po Shan Hsu ◽  
Erin C. Young ◽  
Alexey E. Romanov ◽  
Kenji Fujito ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Dislocation Glide ◽  
Dislocation Formation

TEM analysis of InGaAs/InAlAs epitaxial layers grown over InP patterned substrates

1994 ◽  
Vol 21 (5-6) ◽  
pp. 371-375
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
J.R. Morante ◽  
K. Zekentes ◽  
A. Georgakilas
Keyword(s):  
Epitaxial Layers ◽  
Patterned Substrates ◽  
Tem Analysis

Dislocation Glide Velocity in N- and P-Doped Si1−xGex Layers on Si (001)

1991 ◽  
Vol 220 ◽  
Author(s):  
C. J. Gibbings ◽  
C. G. Tuppen ◽  
V. Higgs
Keyword(s):  
Activation Energy ◽  
Misfit Dislocation ◽  
Doping Level ◽  
Dislocation Glide ◽  
Temperature Range ◽  
Undoped Material

ABSTRACTMisfit dislocation glide velocities in Si.94Ge.06 layers doped to 2.1018cm−2 with boron were measured over the temperature range 500 – 600°C and found to be up to two times slower than that of undoped material. Arsenic doped Si.932Ge.0ee layers on silicon were also studied, and the glide velocity was found to be enhanced by a factor of 80 at the lowest temperature (500°C) and highest doping level (9.1018cm−2) consistent with a decrease in the activation energy for glide from approximately 2eV to 1.3eV as the doping level was increased.

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