Chemical beam epitaxy growth of high-quality InAlAs using TMAA

1992 ◽  
Vol 10 (2) ◽  
pp. 943 ◽  
Author(s):  
M. E. Sherwin
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality

Growth of high quality gallium arsenide on HF‐etched silicon (001) by chemical beam epitaxy

1993 ◽  
Vol 62 (14) ◽  
pp. 1653-1655 ◽  
Author(s):  
Y. R. Xing ◽  
Z. Jamal ◽  
T. B. Joyce ◽  
T. J. Bullough ◽  
C. J. Kiely ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Etched Silicon

Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy

1987 ◽  
Vol 51 (10) ◽  
pp. 761-763 ◽  
Author(s):  
W. T. Tsang ◽  
E. F. Schubert ◽  
T. H. Chiu ◽  
J. E. Cunningham ◽  
E. G. Burkhardt ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality

Kinetics of chemical beam epitaxy for high quality ZnS film growth

1996 ◽  
Vol 164 (1-4) ◽  
pp. 202-207 ◽  
Author(s):  
W. Tong ◽  
B.K. Wagner ◽  
T.K. Tran ◽  
W. Ogle ◽  
W. Park ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Kinetics Of

High-quality InP grown by chemical beam epitaxy

1992 ◽  
Vol 120 (1-4) ◽  
pp. 130-134 ◽  
Author(s):  
H. Rothfritz ◽  
G. Tränkle ◽  
R. Müller ◽  
G. Weimann
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality

Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
T. H. Chiu ◽  
E. F. Schubert ◽  
J. E. Cunningham ◽  
W. T. Tsang ◽  
B. Tell
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Acceptor Concentration ◽  
Capacitance Voltage ◽  
Doping Technique ◽  
Peak Widths ◽  
Undoped Gaas

ABSTRACTHigh quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration NA - ND = 3}10 14cm-3 has been obtained at a low growth temperature of 500°C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plane were prepared. Capacitance-voltage profiling showed a high sheet electron concentration of lx1013cm-2 and peak widths of 22Å and 18Å at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.

Heterogeneous hydride pyrolysis in a chemical beam epitaxy cracker cell and growth of high quality InP

1997 ◽  
Vol 15 (1) ◽  
pp. 29-33 ◽  
Author(s):  
R. T. H. Rongen ◽  
M. R. Leys ◽  
P. J. van Hall ◽  
H. Vonk ◽  
J. H. Wolter
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality

Fabrication of High-Quality InSb Nanowire Arrays by Chemical Beam Epitaxy

2011 ◽  
Vol 11 (5) ◽  
pp. 1896-1900 ◽  
Author(s):  
Alexander T. Vogel ◽  
Johannes de Boor ◽  
Joerg V. Wittemann ◽  
Samuel L. Mensah ◽  
Peter Werner ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Chemical Beam Epitaxy ◽  
High Quality

Some problems of objective-prism spectra classification

1966 ◽  
Vol 24 ◽  
pp. 51-52
Author(s):  
E. K. Kharadze ◽  
R. A. Bartaya
Keyword(s):  
Short Wave ◽  
High Quality ◽  
Stellar Spectra ◽  
Objective Prism

The unique 70-cm meniscus-type telescope of the Abastumani Astrophysical Observatory supplied with two objective prisms and the seeing conditions characteristic at Mount Kanobili (Abastumani) permit us to obtain stellar spectra of a high quality. No additional design to improve the “climate” immediately around the telescope itself is being applied. The dispersions and photographic magnitude limits are 160 and 660Å/mm, and 12–13, respectively. The short-wave end of spectra reaches 3500–3400Å.

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