Growth of high quality gallium arsenide on HF‐etched silicon (001) by chemical beam epitaxy

1993 ◽  
Vol 62 (14) ◽  
pp. 1653-1655 ◽  
Author(s):  
Y. R. Xing ◽  
Z. Jamal ◽  
T. B. Joyce ◽  
T. J. Bullough ◽  
C. J. Kiely ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Etched Silicon

Fine Grinding of Silicon Wafers: Grinding Marks

2002 ◽  
Author(s):  
Z. J. Pei ◽  
Alan Strasbaugh
Keyword(s):  
Silicon Wafer ◽  
Low Cost ◽  
Base Material ◽  
Silicon Wafers ◽  
High Yield ◽  
Manufacturing Processes ◽  
High Quality ◽  
Fine Grinding ◽  
Etched Silicon

In order to ensure high quality chips with high yield, the base material, semiconductor wafers (over 90% are silicon), must have superior quality. It is critically important to develop new manufacturing processes that allow silicon wafer manufacturers to produce high quality wafers at a reasonably low cost. A newly patented technology—fine grinding of etched silicon wafers—has great potential to manufacture very flat silicon wafers more cost-effectively. This paper presents an investigation of grinding marks in fine grinding. The investigation covers (1) nature of grinding marks, (2) factors that have effects on grinding marks, and (3) approaches to reduce grinding marks. Varying chuck speed during grinding operation is shown to be a very effective approach to reduce grinding marks. Conclusions from this study have direct impacts to the silicon wafer industry.

Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy

1987 ◽  
Vol 51 (10) ◽  
pp. 761-763 ◽  
Author(s):  
W. T. Tsang ◽  
E. F. Schubert ◽  
T. H. Chiu ◽  
J. E. Cunningham ◽  
E. G. Burkhardt ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality

Kinetics of chemical beam epitaxy for high quality ZnS film growth

1996 ◽  
Vol 164 (1-4) ◽  
pp. 202-207 ◽  
Author(s):  
W. Tong ◽  
B.K. Wagner ◽  
T.K. Tran ◽  
W. Ogle ◽  
W. Park ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Kinetics Of

High-quality InP grown by chemical beam epitaxy

1992 ◽  
Vol 120 (1-4) ◽  
pp. 130-134 ◽  
Author(s):  
H. Rothfritz ◽  
G. Tränkle ◽  
R. Müller ◽  
G. Weimann
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality

High-quality YBa2Cu3O7 films on 4-in. Wafers of sapphire, gallium arsenide, and silicon

1994 ◽  
Vol 7 (1) ◽  
pp. 231-233 ◽  
Author(s):  
W. Prusseit ◽  
B. Utz ◽  
P. Berberich ◽  
H. Kinder
Keyword(s):  
Gallium Arsenide ◽  
High Quality

Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
T. H. Chiu ◽  
E. F. Schubert ◽  
J. E. Cunningham ◽  
W. T. Tsang ◽  
B. Tell
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Acceptor Concentration ◽  
Capacitance Voltage ◽  
Doping Technique ◽  
Peak Widths ◽  
Undoped Gaas

ABSTRACTHigh quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration NA - ND = 3}10 14cm-3 has been obtained at a low growth temperature of 500°C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plane were prepared. Capacitance-voltage profiling showed a high sheet electron concentration of lx1013cm-2 and peak widths of 22Å and 18Å at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.

Heterogeneous hydride pyrolysis in a chemical beam epitaxy cracker cell and growth of high quality InP

1997 ◽  
Vol 15 (1) ◽  
pp. 29-33 ◽  
Author(s):  
R. T. H. Rongen ◽  
M. R. Leys ◽  
P. J. van Hall ◽  
H. Vonk ◽  
J. H. Wolter
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Quality
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