Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
T. H. Chiu ◽  
E. F. Schubert ◽  
J. E. Cunningham ◽  
W. T. Tsang ◽  
B. Tell
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Acceptor Concentration ◽  
Capacitance Voltage ◽  
Doping Technique ◽  
Peak Widths ◽  
Undoped Gaas

ABSTRACTHigh quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration NA - ND = 3}10 14cm-3 has been obtained at a low growth temperature of 500°C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plane were prepared. Capacitance-voltage profiling showed a high sheet electron concentration of lx1013cm-2 and peak widths of 22Å and 18Å at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.

Characterization of high quality a-Si:H for solar cells at low energy and at low temperature by PDS

1994 ◽  
Vol 34 (1-4) ◽  
pp. 549-555 ◽  
Author(s):  
S. Nonomura ◽  
T. Nishiwaki ◽  
E. Nishimura ◽  
S. Hasegawa ◽  
T. Itoh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Low Energy ◽  
High Quality

Low temperature synthesis and characterization of substitutional Na-modified K2Ti6O13 nanobelts with improved photocatalytic activity under UV irradiation

RSC Advances ◽  
2015 ◽  
Vol 5 (81) ◽  
pp. 66086-66095 ◽  
Author(s):  
Qiang Wang ◽  
Qingjun Guo ◽  
Bing Li
Keyword(s):  
Photocatalytic Activity ◽  
Low Temperature ◽  
Uv Irradiation ◽  
Synthesis And Characterization ◽  
High Quality ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis

High-quality substitutional Na-modified K2Ti6O13 nanobelts with improved photocatalytic activity were synthesized efficiently from NaCl–KCl melts below 700 °C.

Low Temperature High Quality Growth of Silicon-Dioxide Using Oxygenation of Hydrogenation-Assisted Nano-Structured Silicon Thin Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Nima Rouhi ◽  
Behzad Esfandyarpour ◽  
Shams Mohajerzadeh ◽  
Pouya Hashemi ◽  
Bahman Hekmat-Shoar ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Oxidation Process ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
High Quality ◽  
Silicon Thin Films ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mos Structures

AbstractWe report a low temperature high quality oxide growth of nano-structured silicon thin films on silicon substrates obtained through a hydrogenation-assisted PECVD technique followed by a plasma enhanced oxidation process. The deposited layers were investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of Ellipsometry, Rutherford backscattering (RBS), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and by current voltage and capacitance voltage measurements on metal-oxide-semiconductor (MOS) structures.

Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

2004 ◽  
Vol 22 (6) ◽  
pp. 2419-2423 ◽  
Author(s):  
Y. J. Zhang ◽  
P. X. Yan ◽  
Z. G. Wu ◽  
J. W. Xu ◽  
W. W. Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Arc Plasma ◽  
High Quality ◽  
Tin Films ◽  
Cathode Arc
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