Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
1984 ◽
Vol 68
(1)
◽
pp. 398-405
◽
2008 ◽
Vol 5
(6)
◽
pp. 2283-2285
◽
Keyword(s):
1986 ◽
Vol 2
(6)
◽
pp. 501-505
◽
1990 ◽
Vol 105
(1-4)
◽
pp. 339-347
◽