Erratum: ‘‘Momentum-space images of surface dimers on GaAs(001)-(2×4) by high-energy Auger and x-ray photoelectron diffraction’’ [J. Vac. Sci. Technol. B 10, 2092 (1992)]

1992 ◽  
Vol 10 (5) ◽  
pp. 2333
Author(s):  
S. A. Chambers
Keyword(s):  
Momentum Space ◽  
High Energy ◽  
Space Images ◽  
X Ray ◽  
Photoelectron Diffraction

Growth of Transition Metal Films on AL(110) Surfaces

1995 ◽  
Vol 399 ◽  
Author(s):  
R.J. Smith ◽  
Adli A. Saleh ◽  
V. Shutthanandan ◽  
N.R. Shivaparan ◽  
V. Krasemann
Keyword(s):  
High Energy ◽  
Metal Films ◽  
Surface Strain ◽  
The Other ◽  
Photoemission Spectroscopy ◽  
Alloy Formation ◽  
Ion Scattering ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Ti Films

ABSTRACTThe growth of thin Pd, Ni, Fe and Ti films on Al(110) surfaces has been studied using high-energy ion scattering (HEIS), x-ray photoemission spectroscopy and photoelectron diffraction techniques. Of these four metals, only Ti grows as an epitaxial overlayer, while the other metals mix with the substrate to form surface alloys. In the HEIS experiments the backscattered ion yield from Al surface atoms is measured as a function of metal coverage on the Al surface. A decrease in the Al scattering is observed for Ti deposition while the other metals result in increased Al scattering, attributed to alloy formation. An explanation for the exceptional growth behavior of Ti on Al is provided using a model of surface strain associated with aluminide formation.

Development of a Novel Instrument for X-Ray Photoelectron Diffraction and Holography

2003 ◽  
Vol 10 (02n03) ◽  
pp. 505-510 ◽  
Author(s):  
Hideshi Ishii ◽  
Susumu Shiraki ◽  
Keiji Tamura ◽  
Wei-Guo Chu ◽  
Masanori Owari ◽  
...  
Keyword(s):  
High Power ◽  
Angular Resolution ◽  
High Energy ◽  
High Angular Resolution ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Laboratory Instrument ◽  
Spectrometer System

For X-ray photoelectron diffraction (XPED) and holography measurements we developed a novel laboratory instrument with the multienergy high power X-ray source and the high energy and high angular resolution photoelectron spectrometer system. The photon intensities of Al–Kα, Cr–Lα and Cu–Kα were estimated at 4.6 × 1011 cps, 7.5 × 1010 cps and 7.2 × 1010 cps, respectively. Ag3d XPS also revealed that the energy resolutions of Al–Kα and Cr–Lα sources were 0.9 eV and 3.1 eV, respectively. XPS and XPED of h-BN/Ni(111) excited by Al–Kα and Cr–Lα elucidated the potential and the validity of the XPED and holography analysis by using this novel instrument. Cu–Kα excitation XPS and Ti1s XPED measurements of the SrTiO3 (001) surface have also been performed.

X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 799-802 ◽  
Author(s):  
Z. H. Lu ◽  
J.-M. Baribeau ◽  
T. E. Jackman
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Valence Band Maximum ◽  
High Energy Resolution ◽  
Orbit Splitting ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Spin Orbit Splitting ◽  
Spectroscopy Studies

High-energy resolution X-ray photoelectron spectroscopy, with full width at half maximum of 0.41 eV for the Si 2p and of 0.54 eV for the Ge 3d, has been used to study the valence band offsets of different strained Ge layers grown on Si (100). The fractional volume changes in Ge epilayers have been measured by X-ray photoelectron diffraction and are used to correct the valence band maximum shifts caused by strained-induced spin-orbit splitting at the maxima. Band offset values of 0.80, 0.76, and 0.71 eV are found for Si/(Ge5Si5)/Si (100), Si/(Ge4Si4)/Si (100), and Si/(Ge0.5Si0.5)/Si (100) epilayers, respectively.

Structural determination of the Pd{110}(2×1)p2mg-CO system by means of high-energy x-ray photoelectron diffraction

1996 ◽  
Vol 54 (4) ◽  
pp. 2839-2845 ◽  
Author(s):  
A. Locatelli ◽  
B. Brena ◽  
G. Comelli ◽  
S. Lizzit ◽  
G. Paolucci ◽  
...  
Keyword(s):  
High Energy ◽  
Structural Determination ◽  
X Ray ◽  
Photoelectron Diffraction

High-purity Ge x-ray detectors: Sensitivity factors and usefulness

1990 ◽  
Vol 48 (2) ◽  
pp. 548-548
Author(s):  
E. B. Steel
Keyword(s):  
High Purity ◽  
High Energy ◽  
Quantitative Chemical Analysis ◽  
Detector Performance ◽  
X Ray ◽  
Detector Sensitivity ◽  
Specimen Holder ◽  
Many Instruments ◽  
Charge Resolution ◽  
Sensitivity Factors

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.

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