(1̄1̄1̄) CdTe surface structure: A study by reflection high energy electron diffraction, x‐ray photoelectron spectroscopy, and x‐ray photoelectron diffraction

1991 ◽  
Vol 9 (6) ◽  
pp. 3025-3030 ◽  
Author(s):  
R. Duszak ◽  
S. Tatarenko ◽  
J. Cibert ◽  
K. Saminadayar ◽  
C. Deshayes
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Cdte Surface

Study of KTiOPO4 surface by x-ray photoelectron spectroscopy and reflection high-energy electron diffraction

2002 ◽  
Vol 34 (1) ◽  
pp. 320-323 ◽  
Author(s):  
V. V. Atuchin ◽  
V. G. Kesler ◽  
N. Yu. Maklakova ◽  
L. D. Pokrovsky ◽  
V. N. Semenenko
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray

Formation of a Ba-Te Surface on GaAs

2003 ◽  
Vol 782 ◽  
Author(s):  
Kevin A. Boulais ◽  
Francisco Santiago ◽  
Karen J. Long ◽  
Victor H. Gehman
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Polycrystalline Form

ABSTRACTThe formation of a Ba-Te surface on GaAs has been investigated. The surface was created using molecular beam epitaxy (MRS). A GaAs (100) surface was first exposed to Te and characterized using x-ray photoelectron spectroscopy (XPS), reflective high energy electron diffraction (RHEED) and low energy electron diffraction (LEED). The Te-reacted surface was then exposed to BaF2 flux producing a second reaction. In this reaction, the BaF2 dissociated leaving barium on the surface but no fluorine. This is in contrast to the clean (no tellurium) GaAs (100) surface in which BaF2 has been shown to grow single crystal. Although high order exists during early stages of the Ba-Te growth, further exposure gives way to a polycrystalline form. This paper discusses the formation and analysis of the Ba-Te surface.

Surface Structure of Sulfur Coated GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Shigeo Goto
Keyword(s):  
Electron Beam ◽  
Surface Structure ◽  
Chemical Bond ◽  
Photoelectron Spectroscopy ◽  
Strong Dependence ◽  
High Energy ◽  
Chemical Bonds ◽  
High Energy Electron ◽  
X Ray ◽  
Beam Diffraction

AbstractSurface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.

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