Electrical properties of nanometer-scale Si p+-n junctions fabricated by low energy Ga+ focused ion beam implantation

1991 ◽  
Vol 9 (5) ◽  
pp. 2718 ◽  
Author(s):  
A. J. Steckl
Keyword(s):  
Electrical Properties ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Nanometer Scale ◽  
Ion Beam Implantation

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

2014 ◽  
Vol 7 (11) ◽  
pp. 115201 ◽  
Author(s):  
Syuto Tamura ◽  
Godai Koike ◽  
Akira Komatsubara ◽  
Tokuyuki Teraji ◽  
Shinobu Onoda ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon Vacancy ◽  
Ion Beam Implantation

Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L716-L718 ◽  
Author(s):  
Tomokazu Nishiyama ◽  
Eum-Mi Kim ◽  
Kazutoshi Numata ◽  
Kangsa Pak
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Direct Growth
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