Ultrashallow Si p+–n junction fabrication by low energy Ga+ focused ion beam implantation
1990 ◽
Vol 8
(6)
◽
pp. 1937
◽
1991 ◽
Vol 9
(5)
◽
pp. 2679
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2009 ◽
Vol 267
(18)
◽
pp. 3072-3075
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2004 ◽
Vol 43
(No. 6A)
◽
pp. L716-L718
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1997 ◽
Vol 36
(Part 1, No. 6B)
◽
pp. 4046-4048
◽
2001 ◽
Vol 227-228
◽
pp. 476-480
◽