Interdiffusion of GaAs/GaAlAs quantum wells enhanced by low energy gallium focused ion beam implantation

1991 ◽  
Vol 9 (5) ◽  
pp. 2679 ◽  
Author(s):  
G. Ben Assayag
Keyword(s):  
Quantum Wells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Implantation

Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused‐ion‐beam implantation

1992 ◽  
Vol 72 (2) ◽  
pp. 422-428 ◽  
Author(s):  
L. B. Allard ◽  
G. C. Aers ◽  
S. Charbonneau ◽  
T. E. Jackman ◽  
R. L. Williams ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Implantation

Focused-ion-beam implantation in strained InGaAs-GaAs quantum wells

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1023-1026 ◽  
Author(s):  
L. B. Allard ◽  
G. C. Aers ◽  
S. Charbonneau ◽  
T. E. Jackman ◽  
I. M. Templeton ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Focused Ion Beam ◽  
Transition Energy ◽  
Ion Beam ◽  
Normal Incidence ◽  
Low Doses ◽  
Dose Rates ◽  
Decay Times ◽  
Ion Beam Implantation ◽  
Nonradiative Decay Rate

Photoluminescence spectroscopy (PL) is used to monitor the degree of focused ion beam induced interdiffusion in InGaAs–GaAs quantum wells using 100 keV Ga+ and Si+ ions. The observed transition energy shifts are consistent with the effects of channeling of the incident ions near normal incidence. PL decay times obtained from pulsed excitation experiments at higher dose rates indicate incomplete annealing of defects in the quantum wells resulting in an enhanced nonradiative decay rate. If Si+ ions are implanted instead of Ga+ ions we find a red shift of the PL peak positions at very low doses owing to a doping effect in the quantum wells.

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

2014 ◽  
Vol 7 (11) ◽  
pp. 115201 ◽  
Author(s):  
Syuto Tamura ◽  
Godai Koike ◽  
Akira Komatsubara ◽  
Tokuyuki Teraji ◽  
Shinobu Onoda ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon Vacancy ◽  
Ion Beam Implantation

Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L716-L718 ◽  
Author(s):  
Tomokazu Nishiyama ◽  
Eum-Mi Kim ◽  
Kazutoshi Numata ◽  
Kangsa Pak
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Direct Growth

Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4046-4048 ◽  
Author(s):  
Hiroki Kondo ◽  
Hirotaka Iwano ◽  
Osamu Nakatsuka ◽  
Kazutaka Kaga ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Hopping Conduction ◽  
Ion Beam Implantation

Low energy focused ion beam milling of silicon and germanium nanostructures

2011 ◽  
Vol 22 (10) ◽  
pp. 105304 ◽  
Author(s):  
Miroslav Kolíbal ◽  
Tomáš Matlocha ◽  
Tomáš Vystavěl ◽  
Tomáš Šikola
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon And Germanium ◽  
Focused Ion Beam Milling

Mutation breeding of nuclease p1 production in Penicillium citrinum by low-energy ion beam implantation

2011 ◽  
Vol 28 (2) ◽  
pp. 544-549 ◽  
Author(s):  
Qinting He ◽  
Nan Li ◽  
Xiaochun Chen ◽  
Qi Ye ◽  
Jianxin Bai ◽  
...  
Keyword(s):  
Ion Beam ◽  
Mutation Breeding ◽  
Penicillium Citrinum ◽  
Low Energy ◽  
Nuclease P1 ◽  
Ion Beam Implantation
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