Electrochemical capacitance‐voltage depth profiling of nanometer‐scale layers fabricated by Ga+focused ion beam implantation into silicon

H. C. Mogul; A. J. Steckl; Gyles Webster; M. Pawlik; S. Novak

doi:10.1063/1.107860

Electrochemical capacitance‐voltage depth profiling of nanometer‐scale layers fabricated by Ga+focused ion beam implantation into silicon

Applied Physics Letters ◽

10.1063/1.107860 ◽

1992 ◽

Vol 61 (5) ◽

pp. 554-556 ◽

Cited By ~ 12

Author(s):

H. C. Mogul ◽

A. J. Steckl ◽

Gyles Webster ◽

M. Pawlik ◽

S. Novak

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Depth Profiling ◽

Nanometer Scale ◽

Electrochemical Capacitance ◽

Capacitance Voltage ◽

Ion Beam Implantation

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Secondary ion mass spectrometry depth profiling of nanometer-scale p+-n junctions fabricated by Ga+ focused ion beam implantation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586355 ◽

1992 ◽

Vol 10 (1) ◽

pp. 333 ◽

Cited By ~ 14

Author(s):

Steven W. Novak

Keyword(s):

Mass Spectrometry ◽

Focused Ion Beam ◽

Secondary Ion Mass Spectrometry ◽

Ion Beam ◽

Depth Profiling ◽

Nanometer Scale ◽

Ion Beam Implantation ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Electrical properties of nanometer-scale Si p+-n junctions fabricated by low energy Ga+ focused ion beam implantation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585679 ◽

1991 ◽

Vol 9 (5) ◽

pp. 2718 ◽

Cited By ~ 8

Author(s):

A. J. Steckl

Keyword(s):

Electrical Properties ◽

Focused Ion Beam ◽

Ion Beam ◽

Low Energy ◽

Nanometer Scale ◽

Ion Beam Implantation

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Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation

Physical Review B ◽

10.1103/physrevb.76.235301 ◽

2007 ◽

Vol 76 (23) ◽

Cited By ~ 35

Author(s):

A. Portavoce ◽

R. Hull ◽

M. C. Reuter ◽

F. M. Ross

Keyword(s):

Quantum Dot ◽

Focused Ion Beam ◽

Ion Beam ◽

Nanometer Scale ◽

Single Quantum ◽

Ion Beam Implantation ◽

Single Quantum Dot ◽

Scale Control

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Nanometer-scale silicide structures formed by focused ion-beam implantation

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258096 ◽

2002 ◽

Cited By ~ 1

Author(s):

T.L. Alford ◽

M. Mitan ◽

J.W. Mayer

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Nanometer Scale ◽

Ion Beam Implantation

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Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1408953 ◽

2001 ◽

Vol 19 (6) ◽

pp. 2525 ◽

Cited By ~ 5

Author(s):

M. M. Mitan ◽

D. P. Pivin ◽

T. L. Alford ◽

J. W. Mayer

Keyword(s):

Barrier Layer ◽

Focused Ion Beam ◽

Ion Beam ◽

Nanometer Scale ◽

Direct Patterning ◽

Ion Beam Implantation ◽

Thin Barrier

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Electrical and Structural Characterizations of Cu(InGa)Se2Thin Films Using Electrochemical Capacitance–Voltage Method and Focused-Ion Beam Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.109 ◽

2000 ◽

Vol 39 (Part 1, No. 1) ◽

pp. 109-113 ◽

Cited By ~ 6

Author(s):

Akira Shimizu ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Electrochemical Capacitance ◽

Capacitance Voltage ◽

Structural Characterizations

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Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4046 ◽

1997 ◽

Vol 36 (Part 1, No. 6B) ◽

pp. 4046-4048 ◽

Cited By ~ 1

Author(s):

Hiroki Kondo ◽

Hirotaka Iwano ◽

Osamu Nakatsuka ◽

Kazutaka Kaga ◽

Shigeaki Zaima ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Hopping Conduction ◽

Ion Beam Implantation

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Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion beam implantation

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference ◽

10.1109/imnc.1999.797509 ◽

2003 ◽

Author(s):

H. Kondo ◽

S. Baba ◽

K. Izumikawa ◽

M. Sakurai ◽

S. Zaima ◽

...

Keyword(s):

Coulomb Blockade ◽

Focused Ion Beam ◽

Ion Beam ◽

Ion Beam Implantation ◽

Low Dimensional

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Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantation

Nanotechnology ◽

10.1088/0957-4484/25/13/135302 ◽

2014 ◽

Vol 25 (13) ◽

pp. 135302 ◽

Cited By ~ 24

Author(s):

J Llobet ◽

M Sansa ◽

M Gerbolés ◽

N Mestres ◽

J Arbiol ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Silicon Nanowire ◽

Mechanical Resonators ◽

Electromechanical Transduction ◽

Ion Beam Implantation

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Focused-ion-beam Implantation of Luminescence Centers in Gallium Nitride in Optical Telecom Frequency Band

10.1109/cleo/europe-eqec52157.2021.9542578 ◽

2021 ◽

Author(s):

Jin-Kyu So ◽

Cesare Soci ◽

Weibo Gao ◽

Nikolay I. Zheludev

Keyword(s):

Gallium Nitride ◽

Frequency Band ◽

Focused Ion Beam ◽

Ion Beam ◽

Luminescence Centers ◽

Ion Beam Implantation

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